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1. Role of Interfaces in Semiconductor Heterostructures

   The design of new microelectronics or optoelectronics devices often involves semiconductor heterolayers which are thin enough to allow pronounced...

   C. Delalande, G. Bastard in Semiconductor Interfaces

   Conference paper 1987
   

2. Electrical Measurements of Band Discontinuities at Heterostructure Interfaces

   Experimental methods of measuring band discontinuities at heterostructure interfaces are discussed using the GaAs/AlxGa1-xAs system as an example....

   T. W. Hickmott in Two-Dimensional Systems: Physics and New Devices

   Conference paper 1986
   

3. Heuristic Approach to Band-Edge Discontinuities in Heterostructures

   After a brief presentation of the various experimental techniques of band-offset determination in heterojunctions, we present our recent heuristic...

   H. Heinrich, J. M. Langer in Two-Dimensional Systems: Physics and New Devices

   Conference paper 1986
   

4. Theory of Heterojunctions: A Critical Review

   The central aspect of an abrupt heterojunction, and the point of departure for all its device properties, is the exact lineup of the bands of the two...

   Herbert Kroemer in Molecular Beam Epitaxy and Heterostructures

   Chapter 1985
   

5. Amorphous-Crystalline Heterojunctions

   Investigation of amorphous-crystalline (a/c) heterojunctions is useful both for the understanding of the fundamental device physics and for...

   Václav Šmíd, Jiří J. Mares, ... Jozef Krištofik in Tetrahedrally-Bonded Amorphous Semiconductors

   Chapter 1985
   

6. Subject Categories and References Year 1981

   Klaus Ploog, Klaus Graf in Molecular Beam Epitaxy of III–V Compounds

   Chapter 1984
   

7. Subject Categories and References Year 1982

   Klaus Ploog, Klaus Graf in Molecular Beam Epitaxy of III–V Compounds

   Chapter 1984
   

8. Photovoltaic Behavior of Junctions

   As noted in Chapter 2, a generalized photovoltaic device is composed of three functional elements, namely, an absorber, a junction region or...

   Kasturi Lal Chopra, Suhit Ranjan Das in Thin Film Solar Cells

   Chapter 1983
   

9. Basic Physical Processes in Solar Cell Materials

   The basic physical processes underlying the operation of a solar cell consist of various optical interactions and generation/recombination and...

   Kasturi Lal Chopra, Suhit Ranjan Das in Thin Film Solar Cells

   Chapter 1983
   

10. Laser diodes and LEDs for fiber optical communication

    H. Kressel, M. Ettenberg, ... I. Ladany in Semiconductor Devices for Optical Communication

    Chapter 1980
    

11. Electrical and photovoltaic properties of Cd_1−x Zn _x S/p-GaAs heterojunctions

    Cd _{1− x} Zn _x S/ p -GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd _{1− x} Zn _x S epitaxial layers on...

    P. Franzosi, C. Ghezzi, E. Gombia in Applied physics

    Article 01 January 1980

12. Heterojunction phenomena and interfacial defects in photovoltaic converters

    A. L. Fahrenbruch, J. Aranovich in Solar Energy Conversion

    Chapter 1979
    

13. The application of heterojunction structures to optical devices

    Basic factors are reviewed that enter into the successful operation of single crystal heterojunction devices, with an emphasis on the role of...

    H. Kressel in Journal of Electronic Materials

    Article 01 October 1975

14. Opto-electronic properties of heterojunctions—A review

    The development of techniques for the deposition of semiconductor layers has led, over the last decade, to intensive studies of heterojunction...

    T. L. Tansley in Opto-electronics

    Article 01 August 1969

15. Isotype GaAs-CdS-heterojunctions

    V. M. Lupin, M. A. Petrov, P. E. Ramazanov in Soviet Physics Journal

    Article 01 June 1972