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Process Mechanisms and Variables Affecting Shock-Consolidation of Diamond Powders
Shock consolidation was utilized to compact diamond powders for fabrication of 10 mm diameter by 1 mm thick wafers for possible electronic...
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Stabilization of the stainless-steel interface using sequentially deposited Al2O3 nano films using atomic layer deposition (ALD) technique
Atomic layer deposition (ALD) has been an important surface processing technique of materials of important applications. In the present investigation...
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Growth and Magnetotransport Properties of Thin Co2MnGe Layered Structures
Co2MnGe and other related Heusler alloys are investigated in the context of magnetotransport properties in multilayer (ML) structures. The most...
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Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films
Ferroelectric rare-earth-doped Bi4Ti3O12 thin films have been successfully prepared on Si-based substrates by using metallo-organic precursor...
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Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites
We have developed a new superlattice technique to artificially control the B-site ordering state. The technique has been applied to Ba(Zr0.2Ti0.8)O3,...
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Pb-Based Ferroelectric Thin Films Prepared by MOCVD
This Chapter focuses on the preparation and ferroelectric properties of Pb-based thin films and nanostructures. First, the growth behavior of...
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The Sputtering Technique
In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
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Novel Si-Substituted Ferroelectric Films
In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
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Overview
A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
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Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM
A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
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The Application of FeRAM to Future Information Technology World
The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
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High-Density Integration
Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
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Rhombohedral PZT Thin Films Prepared by Sputtering
PZT thin films with a rhombohedral perovskite structure were successfully grown on (111) PLT/Pt/Ti/SiO2/Si and (111) Ir/SiO2/Si substrates. The...
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Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions
In the present chapter, the growth of single crystals in relaxor–PbTiO3 (PT) solid solution system by the flux method and the solution Bridgman...
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A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films
The electrical properties of Bi-based layer-structured perovskite compounds strongly depend on their anisotropic crystal structure. Because of...
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Effect of Nitrogen on the Precipitation and Pitting Corrosion Susceptibility of High Nitrogen 316SS Weld
The present study aimed to understand the effect of nitrogen on the carbide precipitation and its influence on pitting corrosion of shielded metal...
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General Theory of Superexchange in Molecules
After recalling the basic physical backgrounds, we examine the concept of magnetic orbital, which is very useful for treating the mechanism of...
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Synthesis of Single-molecule Magnets Using Metallocyanates
Cyanometallate building blocks are inert and stable molecules that may act as ligands towards metal complexes. A stepwise approach allows...
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Preparation of Novel Materials Using SMMs
Magnetic hysteresis is considered a distinctive feature of bulk magnetic materials, where it arises from long-range ordering and irreversible...