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  1. Rhombohedral PZT Thin Films Prepared by Sputtering

    PZT thin films with a rhombohedral perovskite structure were successfully grown on (111) PLT/Pt/Ti/SiO2/Si and (111) Ir/SiO2/Si substrates. The...
    Masatoshi Adachi in Ferroelectric Thin Films
    Chapter
  2. Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions

    In the present chapter, the growth of single crystals in relaxor–PbTiO3 (PT) solid solution system by the flux method and the solution Bridgman...
    Naohiko Yasuda in Ferroelectric Thin Films
    Chapter
  3. Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites

    We have developed a new superlattice technique to artificially control the B-site ordering state. The technique has been applied to Ba(Zr0.2Ti0.8)O3,...
    Hitoshi Tabata in Ferroelectric Thin Films
    Chapter
  4. Pb-Based Ferroelectric Thin Films Prepared by MOCVD

    This Chapter focuses on the preparation and ferroelectric properties of Pb-based thin films and nanostructures. First, the growth behavior of...
    Masaru Shimizu, Hironori Fujisawa, Hirohiko Niu in Ferroelectric Thin Films
    Chapter
  5. Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films

    Ferroelectric rare-earth-doped Bi4Ti3O12 thin films have been successfully prepared on Si-based substrates by using metallo-organic precursor...
    Shin-ichi Hirano, Takashi Hayashi, ... Toshinobu Yogo in Ferroelectric Thin Films
    Chapter
  6. 13 Dynamic, One-Dimensional and Miscellaneous Problems

    The previous part of this monograph makes it clear that the branch of the Mathematical Theory of Contact Mechanics, which deals with quasistatic...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  7. 6 Mathematical Preliminaries

    Part II provides mathematical formulations of the models, the assumptions that underlie them, their weak or variational formulations and the...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  8. 11 Contact with Wear or Adhesion

    In this chapter we present results on models of frictional contact when the wear of the contacting surfaces is taken into account. The importance of...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  9. 3 Additional E.ects Involved in Contact

    More is involved in contact than just friction, although it is the main process. Indeed, during a contact process elastic or plastic deformations of...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  10. 1 Introduction

    Considerable progress has been achieved recently in modeling and mathematical analysis of various processes involved in contact between deformable...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  11. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    Chapter
  12. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter
  13. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter
  14. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter
  15. A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films

    The electrical properties of Bi-based layer-structured perovskite compounds strongly depend on their anisotropic crystal structure. Because of...
    Chapter
  16. High-Density Integration

    Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
    Chapter
  17. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Chapter
  18. Out-of-Plane Vibrations of Plane Frames

    The frame vibrations studied in Chaps. 3 to 5 are for in-plane vibrations. If a plane frame acted upon by a force or horizontal ground vibration in...
    Chapter
  19. Conical Shells of Linearly Varying Thickness Subjected to Normal Loads

    The equilibrium equations for a surface element of a conical shell in the framework of generalized plane stress of linear theory of elasticity are...
    Chapter
  20. Momentum and Energy Relations

    The equations of motion (5.12) for the charged insulating sphere of radius a moving with arbitrary center velocity u(t) can be rewritten in...
    Chapter
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