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  1. Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films

    Ferroelectric rare-earth-doped Bi4Ti3O12 thin films have been successfully prepared on Si-based substrates by using metallo-organic precursor...
    Shin-ichi Hirano, Takashi Hayashi, ... Toshinobu Yogo in Ferroelectric Thin Films
    Chapter
  2. Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites

    We have developed a new superlattice technique to artificially control the B-site ordering state. The technique has been applied to Ba(Zr0.2Ti0.8)O3,...
    Hitoshi Tabata in Ferroelectric Thin Films
    Chapter
  3. Pb-Based Ferroelectric Thin Films Prepared by MOCVD

    This Chapter focuses on the preparation and ferroelectric properties of Pb-based thin films and nanostructures. First, the growth behavior of...
    Masaru Shimizu, Hironori Fujisawa, Hirohiko Niu in Ferroelectric Thin Films
    Chapter
  4. Phase behavior of phytanyl-chained akylglycoside/water systems

    The aqueous phase behavior of novel alkylglycosides, AGs, that have a 3,7,11,15-tetramethylhexadecyl (phytanyl) group as their hydrophobic part was...
    Masakatsu Hato, Hiroyuki Minamikawa, ... Sanae Matsutani in Trends in Colloid and Interface Science XVI
    Conference paper
  5. About energy and electron transfer processes in C60 /phthalocyanine films

    In the present work absorption, photoluminescence excitation and emission spectra of fullerene C60, and a zinc derivative of phthalocyanine (ZnPc) in...
    H. D. Burrows, A. A. Kharlamov in Trends in Colloid and Interface Science XVI
    Conference paper
  6. Determining antioxidant distributions in model food emulsions: development of a new kinetic method based on the pseudophase model in micelles and opaque emulsions

    The mechanisms of lipid peroxidation and the distributions of antioxidants in emulsions are not fully understood, in a large part because...
    L. S. Romsted, J. Zhang in Trends in Colloid and Interface Science XVI
    Conference paper
  7. Methods and Instrumentation

    On the basis of the given brilliances of present-day synchrotron radiation sources one easily estimates that they should be ideally suited for...
    Chapter
  8. 1 Introduction

    Considerable progress has been achieved recently in modeling and mathematical analysis of various processes involved in contact between deformable...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
  9. Coherent Elastic Nuclear Resonant Scattering

    In the field of x-ray diffraction, the intensity and the direction of scattered waves are determined by the properties of the individual scatterers...
    Chapter
  10. 5. Simulation of Active and Nonlinear Photonic Nano-Materials in the Finite-Difference Time-Domain (FDTD) Framework

    A numerical method is presented that unites three-dimensional finite-differnce time-domain (FDTD) computer simulations of active, nonlinear photonic...
    A. Klaedtke, J. Hamm, O. Hess in Computational Materials Science
    Chapter
  11. 13. Parallel Implementation Strategiesfor Algorithms from Scientific Computing

    Many applications from scientific computing are computationally intensive and can therefore benefit from a realization on a parallel or a distributed...
    T. Rauber, G. Rünger in Computational Materials Science
    Chapter
  12. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Chapter
  13. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter
  14. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    Chapter
  15. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter
  16. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter
  17. High-Density Integration

    Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
    Chapter
  18. Rhombohedral PZT Thin Films Prepared by Sputtering

    PZT thin films with a rhombohedral perovskite structure were successfully grown on (111) PLT/Pt/Ti/SiO2/Si and (111) Ir/SiO2/Si substrates. The...
    Masatoshi Adachi in Ferroelectric Thin Films
    Chapter
  19. Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions

    In the present chapter, the growth of single crystals in relaxor–PbTiO3 (PT) solid solution system by the flux method and the solution Bridgman...
    Naohiko Yasuda in Ferroelectric Thin Films
    Chapter
  20. 6 Mathematical Preliminaries

    Part II provides mathematical formulations of the models, the assumptions that underlie them, their weak or variational formulations and the...
    Meir Shillor, Mircea Sofonea, Józef Joachim Telega in Models and Analysis of Quasistatic Contact
    Chapter
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