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Showing 1-20 of 2,564 results
  1. Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots

    Abstract

    Heterostructure with InGaAs/GaAs quantum well-dots was investigated in temperature range 10–300 K using photoluminescence spectroscopy in CW...

    A. M. Nadtochiy, I. A. Melnichenko, ... A. E. Zhukov in Semiconductors
    Article 01 November 2023
  2. An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures

    We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent...

    Fan Zhang, Jose F. Castaneda, ... Yong Zhang in Light: Science & Applications
    Article Open access 13 May 2022
  3. Carrier Recombination and Noise

    In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can...
    Karl W. Böer, Udo W. Pohl in Semiconductor Physics
    Reference work entry 2023
  4. Carrier Recombination and Noise

    In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can...
    Karl W. Böer, Udo W. Pohl in Semiconductor Physics
    Living reference work entry 2022
  5. Transient Parameter Extraction Methods

    Semiconductor traps or impurity states, interface states, or defects, play a crucial role in the performance and reliability of semiconductor...
    Chapter 2024
  6. Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method

    Abstract

    CdS quantum dots prepared by the Langmuir–Blodgett method have been investigated using UV spectroscopy and time-resolved photoluminescence....

    K. A. Svit, A. A. Zarubanov, K. S. Zhuravlev in Journal of Experimental and Theoretical Physics
    Article 01 August 2022
  7. Influence of Low Temperature on the Electrophysical and Noise Characteristics of UV LEDs Based on InGaN/GaN Quantum Well Structures

    Abstract

    Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried...

    A. M. Ivanov, A. V. Klochkov in Semiconductors
    Article 01 August 2023
  8. Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

    III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature....

    Johann Stachurski, Sebastian Tamariz, ... Nicolas Grandjean in Light: Science & Applications
    Article Open access 28 April 2022
  9. Numerical Results and Discussion

    This chapter provides a comparative discussion of the numerical results for the radiative and nonradiative attachment mechanisms under consideration....
    Chapter 2024
  10. Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)

    Abstract

    The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures...

    M. P. Mikhailova, E. V. Ivanov, ... P. S. Kop’ev in Semiconductors
    Article 04 December 2020
  11. Recombination

    The following chapter contains those results of the research conducted for this thesis that may be subsumed under the term recombination. The...
    Chapter 2021
  12. Effect of copper do** on the lifetime of the upper 5T2 laser level of the iron ion in ZnSe

    The effect of copper do** of ZnSe:Fe crystals on the kinetics of luminescence of iron ions is investigated in this work. It has been discovered...

    V. P. Kalinushkin, M. S. Storozhevykh, ... M. V. Chukichev in Applied Physics B
    Article 29 February 2024
  13. Modulation of Recombination Radiation in Quantum Wires by Electric Field and the Possibility of Its Application in Quantum Electronics

    Abstract

    The cross section for the process of single-photon recombination of free charge carriers in the 1D geometry of a thin quantum wire in a...

    A. M. Mandel, V. B. Oshurko, ... E. E. Karpova in Bulletin of the Lebedev Physics Institute
    Article 01 December 2023
  14. Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination

    Abstract

    We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier...

    L. V. Danilov, M. P. Mikhailova, ... P. S. Kop’ev in Semiconductors
    Article 01 December 2020
  15. LED Internal Quantum Efficiency Meter

    Abstract

    A description and characteristics of the developed internal quantum efficiency (IQE) meter for InGaN LEDs are presented. The meter allows one...

    V. A. Sergeev, O. A. Radaev, I. V. Frolov in Instruments and Experimental Techniques
    Article 04 December 2023
  16. Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films

    Abstract

    Radiation-induced effects in Cu(In,Ga)Se 2 alloy thin films after implantation with hydrogen ions with energies of 2.5, 5, and 10 keV and a...

    O. M. Borodavchenko, V. D. Zhivulko, ... I. A. Mogilnikov in Semiconductors
    Article 19 February 2021
  17. Luminescence Quantum Yield and Recombination Constants in Colloidal Core/Shell Ag2S/ZnS and Ag2S/SiO2 Quantum Dots

    Abstract

    The luminescence properties of colloidal Ag 2 S quantum dots (QDs) with ZnS or SiO 2 shells coated with thioglycolic or 2-mercaptopropionic...

    O. V. Ovchinnikov, M. S. Smirnov, S. V. Aslanov in Optics and Spectroscopy
    Article 01 December 2020
  18. Effects of Electromagnetic Radiative Corrections in the Production of Lepton Pairs in Photon–Photon Fusion at LHC

    Abstract

    One-loop electromagnetic radiative corrections to dilepton production in hadron–hadron collisions via photon–photon fusion are studied;...

    V. A. Zykunov in Physics of Atomic Nuclei
    Article 31 October 2022
  19. Features of the Thermal Quenching of Recombination Radiation in Semiconductor Quantum Dots with Impurity Complexes

    Abstract

    Semiconductor quantum dots, due to their unique optical properties, are promising materials for the design of optoelectronic devices. At the...

    V. D. Krevchik, A. V. Razumov, ... P. E. Golubkov in Technical Physics
    Article 01 June 2022
  20. Radiative Recombination Mechanisms in GaSe Films Prepared by Mechanical Exfoliation

    Abstract

    Low-temperature (5 K) luminescence of GaSe films obtained by mechanical exfoliation of a bulk GaSe crystal. It is shown that, in contrast to...

    S. N. Nikolaev, D. A. Litvinov, ... S. I. Chentsov in Bulletin of the Lebedev Physics Institute
    Article 01 June 2021
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