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Shallow-Level Centers
Shallow defect centers play a dominant role as donors and acceptors in nearly all semiconducting devices. The major features of their spectrum can be...
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Deep-Level Centers
A wide variety of deep-level centers exists of both intrinsic and extrinsic origin. They often provide a preferred path for carrier recombination or...
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Shallow-Level Centers
Shallow defect centers play a dominant role as donors and acceptors in nearly all semiconducting devices. The major features of their spectrum can be...
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Deep-Level Centers
A wide variety of deep-level centers exists of both intrinsic and extrinsic origin. They often provide a preferred path for carrier recombination or...
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Identification of Optically Active Quartet Spin Centers Based on a Si Vacancy in SiC Promising for Quantum Technologies
Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been...
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Luminescence due to oxygen at structural defects in A2B6 crystals
New experimental results are presented that describe the role of oxygen centers on structural lattice defects in the optics of A 2 B 6 compounds. It is...
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Nonstandard Features of the Interaction of Single Luminescent Centers Formed by Partial Dislocation Cores in CdTe and ZnSe with Longitudinal Optical Phonons
Low-temperature (5 K) microphotoluminescence has been measured in order to study individual luminescent centers formed by the cores of partial...
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Mechanism of the trivalent lanthanides’ persistent luminescence in wide bandgap materials
The trivalent lanthanides have been broadly utilized as emitting centers in persistent luminescence (PersL) materials due to their wide emitting...
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Investigation by ESR Spectroscopy of Biology Active Electron-Rich 1,10-Phenanthrocyanines of d-Elements (Soft Colloidal Glasses)
The 1,10-phenanthrocyanines of d-elements were investigated by ESR spectroscopy both in the solid (glassy) state and in solutions. These are...
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Features of the Luminescence Spectra of ZnSe ⋅ O Crystals in Band Anticrossing Theory
AbstractThe effect of the structural features of self-activated zinc selenide and crystals with activators on the emission spectra is investigated in...
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Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals
The influence of oxygen on the electrical properties of PbS are well known. The goal of this study is to compare and reveal this phenomenon in CdS(O)...
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Luminescent Properties of the Jahn‒Teller Center in Carbon-Doped Tin Disulfide
AbstractWe report an investigation of the C Sn -center luminescent properties in the 2H SnS 2 polytype over a wide temperature range. It is shown that...
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Silicon Fundamentals for Photonics Applications
The many and diverse approaches to materials science problems have greatly enhanced our ability to engineer the physical properties of...
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Monolithic Silicon Light Sources
Monolithic silicon light sources (LEDs and lasers) could have a significant impact when integrated on silicon chips. After a general introduction to...
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Carrier Recombination and Noise
In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can...
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Epitaxial Growth of III-Nitride LEDs
This chapter introduces epitaxial growth of III-nitride blue/green/ultraviolet LEDs. Firstly, the epitaxial structure of GaN-based blue LED is...
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Crystal Defects
Semiconducting properties of most interest are predominantly caused by crystal defects. They are classified into point, line, and planar defects....
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Strong spin–orbit quenching via the product Jahn–Teller effect in neutral group IV qubits in diamond
Artificial atom qubits in diamond have emerged as leading candidates for a range of solid-state quantum systems, from quantum sensors to repeater...
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Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag,Cu)2Zn(Sn,Ge)Se4 thin films
In this study, ACZTGSe thin films were fabricated by two-stage method to understand the effect of Ag and Ge incorporation in CZTSe system for the...
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Carrier Recombination and Noise
In steady state, for each act of carrier generation or excitation there must be one inverse process of recombination or relaxation. Carriers can...