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Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix
The possibility of fabricating two-dimensional Si layers on a CaF 2 /Si(111) film by molecular beam epitaxy is studied. The growth conditions, under...
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Ferromagnetic Silicides and Germanides Epitaxial Films and Multilayered Hybrid Structures: Synthesis, Magnetic and Transport Properties
AbstractPlanar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of...
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Effect of Sacrificial Mg2Si Layers and Kinetic Parameters on the Growth, Structure, and Optical Properties of Thin Ca2Si Films on Silicon Substrates
AbstractWe simulate the conjugation of crystal lattices of two-dimensional Mg 2 Si layers with atomically clean Si(001)2×1 and Si(110)"16×2" surfaces....
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Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction
Anti-phase domains (APD) deteriorate the electronic and optical properties of the polar layer grown on non-polar substrates. It is important to...
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon
AbstractThe purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a...
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Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz
On a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key...
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Molecular Beam Epitaxy of Rare-Earth Oxides
We present results for crystalline lanthanide oxides on silicon with the Ln2O3 composition (Ln = Pr, Nd and Gd) in the cubic bixbyite structure grown...
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Two-Dimensional Materials of Group IVA: Latest Advances in Epitaxial Methods of Growth
Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene – a...
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FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si
AbstractMg 2 Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi
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Misfit Stresses in Epitaxial Germanium Nanofilms on Substrates of Si(111) with Low-Density Surface Phases
AbstractIt is established for the first time in the physics of condensed matter that the transitions of superstructural phases on the surface of an...
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Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate
AbstractIslands in the form of truncated triangular pyramids on the surface of an epitaxial Ge 3 Sb 2 Te 6 layer grown on a Si(111) substrate are...
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Investigation of the Relationship between Mechanical Stresses, Optical Inhomogeneity, and the Oxygen Concentration in Germanium Crystals
AbstractThe results of a study of the radial distribution of the mechanical stresses, oxygen concentration, and optical inhomogeneity in...
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Defect Engineering in Epitaxially Grown Cd(Zn)Te Thin Films on Lattice-Mismatch Substrates
II–VI (Hg)(Cd)(Zn)Te semiconductors are significant materials with a wide range of applications in high-end infrared (IR) sensing/imaging, radiation...
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Light Generation, Amplification, and Wavelength Conversion via Stimulated Raman Scattering in Silicon Microstructures
This chapter is organized in two parts. In part one, we present the theory of Spontaneous and Stimulated Raman Scattering (SRS), as well as that of...
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Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase
Abstract —Ge diffusivity from a buried SiO 2 layer of a silicon-on-insulator (SOI) structure has been studied as a function of annealing temperature....
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Light Emission from Germanium Nanostructures
This Chapter discusses the phenomena associated with germanium (Ge) nanocrystals emitting near infrared radiation under optical excitation. We...
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Specific Features of the Interaction of a Germane Molecule with Germanium Surface in Vacuum in the Presence of Hydrogen Flow
AbstractThe temperature dependence of the main kinetic parameters that determine the rate of pyrolysis of adsorbed germane molecules on the surface...
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Background on Microelectronics
Subject matter of Microelectronics is material processing, mainly semiconductor and metal, and related physics to fabricate (make) nanostructures.
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Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides
AbstractData on the dependence of the growth rate of Si layers deposited onto Ge(111) by the hydride method on their thickness at the initial...
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Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures
AbstractWe have studied a multilayer heteronanostructure comprising three pairs of amorphous silicon and amorphous germanium ( a -Ge/ a -Si:H) layers...
