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1. Strained crystalline nanomechanical resonators with quality factors above 10 billion

   In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon,...

   A. Beccari, D. A. Visani, ... T. J. Kippenberg in Nature Physics

   Article 28 February 2022
   

2. Tuning photoluminescence behaviors in strained monolayer belt-like MoS₂ crystals confined on TiO₂(001) surface

   We report on a monolayer (ML) MoS ₂ belt-like single crystal directly fabricated on the Rutile-TiO ₂ (001) surface via chemical vapor deposition (CVD)....

   Yuanye Wang, Jun Zhou, ... Ruifen Dou in AAPPS Bulletin

   Article Open access 21 September 2022
   

3. Passivation Study of InAs/GaSb Type-II Strained Layer Superlattice in Mid-wave Infrared Photodetector

   This paper reports the results of a passivation study of InAs/GaSb type-II strained layer superlattice for a mid-wave infrared detector with p-on-n...

   Ha Sul Kim in Journal of the Korean Physical Society

   Article 15 November 2020

4. Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

   Abstract

   The formation of locally strained Ge microstructures (microbridges) on silicon-on-insulator (SOI) substrates embedded into cavities and the...

   D. V. Yurasov, N. A. Baídakova, ... A. V. Novikov in Semiconductors

   Article 01 June 2021
   

5. H⁺ ion implantation-induced effect investigations in a-plane GaN layer on r-plane sapphire

   In this paper, we report light ion (H ⁺ ) implantation-induced effect on a-plane GaN epitaxial layer on the sapphire substrate. Non-polar (NP) a-plane...

   Sharmila, Sandeep Dalal, ... Akhilesh Pandey in Applied Physics A

   Article 07 September 2023
   

6. The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures

   Abstract

   The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures...

   I. I. Novikov, I. A. Nyapshaev, ... A. Yu. Egorov in Semiconductors

   Article 01 November 2023
   

7. Possible strain-induced enhancement of the superconducting onset transition temperature in infinite-layer nickelates

   The mechanism of unconventional superconductivity in correlated materials remains a great challenge in condensed matter physics. The recent discovery...

   **aolin Ren, Jiarui Li, ... Zhihai Zhu in Communications Physics

   Article Open access 27 November 2023
   

8. Electron–hole superfluidity in strained Si/Ge type II heterojunctions

   Excitons are promising candidates for generating superfluidity and Bose–Einstein condensation (BEC) in solid-state devices, but an enabling material...

   Sara Conti, Samira Saberi-Pouya, ... David Neilson in npj Quantum Materials

   Article Open access 23 April 2021
   

9. Epitaxial Growth and Electronic Structure of Self-Assembled Quantum Dots

   Semiconductor self assembled quantum dots have emerged as one of the simplest means of exploring and exploiting the physics and device applications...

   Pierre M. Petroff in Single Quantum Dots

   Chapter
   

10. A new family of septuple-layer 2D materials of MoSi₂N₄-like crystals

    Recently synthesized MoSi ₂ N ₄ is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been...

    T. Latychevskaia, D. A. Bandurin, K. S. Novoselov in Nature Reviews Physics

    Article 17 June 2024
    

11. A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films

    Abstract

    In the article, using the example of growing aluminum nitride (AlN) on (110) orientation silicon (Si) with a silicon carbide (SiC) buffer...

    A. A. Koryakin, S. A. Kukushkin, ... M. P. Shcheglov in Mechanics of Solids

    Article 11 May 2023
    

12. Tilting of the top layer of graphoepitaxial metal-oxide multilayer thin film heterostructures

    The mechanisms of tilt formation in the metal oxide multilayer heterostructures with graphoepitaxial (3DGE) growth mode were studied in the YBa ₂ Cu ₃ O _x –CeO...

    Peter B. Mozhaev, Igor K. Bdikin, ... Claus S. Jacobsen in Applied Physics A

    Article 13 November 2021
    

13. Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile

    Abstract

    Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers In _x Al _{1– x} As/GaAs with maximum...

    M. Yu. Chernov, V. A. Solov’ev, S. V. Ivanov in Semiconductors

    Article 01 March 2023
    

14. Interfacial effect and strain on the electrical and magnetic properties of SrRuO₃/NdNiO₃ bilayers with 3D island surface layer

    3d–4d perovskite oxide SrRuO ₃ /NdNiO ₃ (SRO/NNO) bilayers were epitaxially deposited on (001)- and (011)- LaAlO ₃ (LAO) substrates by polymer-assisted...

    R. X. Tong, L. Shi, ... L. Hou in Applied Physics A

    Article 28 November 2022
    

15. Thermodynamics of Epitaxial Layer-Growth

    Growth requires some deviation from thermodynamic equilibrium. This chapter outlines the driving force for equilibrium-near growth of a crystal in...

    Udo W. Pohl in Epitaxy of Semiconductors

    Chapter 2020
    

16. Cap** layers and their roles in polar catastrophe scenario of LaAlO₃/SrTiO₃ (001) systems

    Under the assumption that epitaxially strained growth is taking place under strained growth conditions, the metallic and insulating properties of...

    **hyung Cho, Hyoungjeen Jeen in Journal of the Korean Physical Society

    Article 24 October 2022
    

17. Synthesis of Deformation Resistant Palladium (Pd) Nanoparticle Layer

    In this study, a comparison of structural changes on hydrogen loading-deloading cycles in palladium (Pd) nanoparticle layer and Pd thin film has been...

    Saurabh K. Sengar, Vinod Singh, ... Ashok Kumar in Proceedings of the International Conference on Atomic, Molecular, Optical & Nano Physics with Applications

    Conference paper 2022
    

18. Nano-Scale Architecture of Quantum-Size Structures at the Growth from Quaternary In–As–Sb–P Liquid Phase on InAs(100) Substrate

    Abstract

    In this review paper we present results of the growth, characterization and electronic properties of InAsSbP composition strain-induced...

    K. M. Gambaryan in Journal of Contemporary Physics (Armenian Academy of Sciences)

    Article 27 May 2022
    

19. Applications of Raman, IR, and CL Spectroscopy

    This chapter describes the latest analysis examples, combing Raman, IR, and CL spectroscopy. Strained Si techniques, such as incorporating SiGe is...

    Masanobu Yoshikawa in Advanced Optical Spectroscopy Techniques for Semiconductors

    Chapter 2023
    

20. Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction

    Anti-phase domains (APD) deteriorate the electronic and optical properties of the polar layer grown on non-polar substrates. It is important to...

    Ravi Kumar, R. Roychowdhury, ... T. K. Sharma in The Physics of Semiconductor Devices

    Conference paper 2024