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Homogeneous barrier height temperature dependence of Au/n-type GaAs Schottky diode
The forward current–voltage ( I – V ) measurements upon temperature of Au/ n -type GaAs Schottky barrier diodes (SBDs) have been carried out. The deduced...
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Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition
The Pt/Ge Schottky junctions were fabricated with an atomic layer deposition (ALD)-grown ZnO interlayer (IL) and the interfacial properties of...
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Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN
The forward current–voltage (Ig-Vg) properties of the (Ni-Au)/Al 0.25 Ga 0.75 N/GaN/SiC structure were examined in the temperature range of 50–320K....
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A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height
In this paper, two Schottky structures of Au/n-GaAs (sample A) and Au/0.8 nm-GaN/n-GaAs (sample B) were fabricated and electrically characterized by...
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Impact of controlling the barrier height on fabrication of high performance β-Ga2O3 solar-blind photodetectors
Photodetectors based on Ga 2 O 3 have stimulated extensive attention for diverse applications from civil and military filed. Great progress has been...
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Influence of bias-induced barrier height lowering on charge tunneling in large-area molecular junctions
We investigated a large-area molecular tunnel junction of alkanethiol self-assembled monolayers with the top contact of poly...
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Optical Potential Barrier Transparency for the Fast Neutron
AbstractThe transparency of the spherical optical potential barrier to an incident neutron with energy between 70 and 200 MeV has been calculated....
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The Multi-humped Fission Barrier
Nuclear fission is a process that very soon after its discovery was understood as tunneling through a barrier. This barrier refers to a structure in...
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The Multi-Humped Fission Barrier
Nuclear fission is a process that very soon after its discovery was understood as tunneling through a barrier. This barrier refers to a structure in...
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Vinen’s Energy Barrier
In 1963, the late W. F. (“Joe”) Vinen concluded, partly on intuitive grounds, that the ab initio creation of a quantized vortex line in superfluid
... 
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Electrodes: the real performers in single-barrier ferroelectric tunnel junctions
To study the role of the emitter and collector electrode materials in Ferroelectric Tunnel Junctions (FTJs), an in-depth theoretical investigation of...
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Sub-barrier Fusion Reactions
The concept of compound nucleus was proposed by Niels Bohr in 1936 to explain narrow resonances observed in scattering of a slow neutron off atomic...
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Sub-barrier fusion hindrance and absence of neutron transfer channels
The sub-barrier fusion hindrance has been observed in the domain of very low energies of astrophysical relevance. The measured fusion cross sections...
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Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a...
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Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs
In this paper, we present the effect of chirped barrier on the optical properties of InGaN/GaN and InGaN/InGaN multi quantum wells (MQWs) based...
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Quantification of Schottky barrier height and contact resistance of a Au electrode on multilayer WSe2
Two-dimensional transition-metal dichalcogenide (TMD) device performance is significantly affected by the contact resistance of Schottky contacts at...
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Sensitivity of \(\beta _4\) values extracted from quasi elastic barrier distribution to the 2n transfer channel
In recent times, the Fusion Barrier Distributions (FBD) determined from quasi-elastic scattering measurements have been employed to determine the...
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II-VI Wide-Bandgap Semiconductor Device Technology: Schottky Barrier, Ohmic Contacts, and Heterostructures
Due to the difficulty of do** II-VI compounds and forming p-n junctions on their basis, the use of heterojunctions, i.e., structures formed by...
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Effect of tunnelling in double barrier nitride (AlGaN/GaN) heterojunction
In a double-barrier heterostructure made of (AlGaN/GaN), the tunneling effect has been investigated, and the probability that electrons will pass...
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Finite barrier bound state
A boundary mode localized on one side of a finite-size lattice can tunnel to the opposite side which results in unwanted couplings. Conventional...
