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Effect of an Oxidized Metallic Zn Buffer Layer on the Morphological, Optical, Electrical, and Photoresponse Properties of Spin-coated ZnO Films
We studied the morphological, optical, electrical, and photoresponse properties of ZnO thin films grown by using the sol-gel spin-coating method on...
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Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation
We fabricated fully strained Si 0.77 Ge 0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation...
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Removal of nonylphenol from industrial sludge by using an electron beam
Endocrine disrupting chemicals (EDCs) and potential EDCs are mostly man-made, found in various materials such as pesticides, additives or...
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Study of high-temperature oxidation of ultrathin fe films on Pt(100) by using X-ray photoelectron spectroscopy
High-temperature oxidation of iron thin films deposited on Pt(100) surfaces was studied by using X-ray photoelectron spectroscopy (XPS). Upon an...
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Oxidation-temperature dependence of the optical properties of ZnO thin films grown on corning glass by oxidation of metallic Zn
We investigated the structural and the optical properties of ZnO thin films formed on Corning glass by the oxidation of Zn thin films, which were...
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Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts
In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The...
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Bulk anodization of Al by using high voltage and polydimethylsiloxane imprinting for transparent conductive films
Bulk anodization of Al was successfully carried out at 300 V by controlling the concentrations of phosphoric acid and ethanol used during processing....
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Pd/Ta2O5/SiC Schottky-diode hydrogen sensors formed by using rapid thermal oxidation of Ta thin films
Pd/Ta 2 O 5 /SiC Schottky-diode hydrogen sensors were fabricated, and their hydrogen gas sensing performance was investigated at 573 K and 773 K....
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Structural and electronic properties of atomic oxygen adsorption on Cu(111) surface: A first-principles investigation
By using the first-principles calculations, we have systematically investigated the adsorption of atomic oxygen on Cu(111) surface for a wide range...
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First-principles study of the adsorption of oxygen atoms on copper nanowires
By using first-principles calculations, we have systematically investigated the structural stability and electronic properties of a single oxygen...
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Study of density of interface states in MOS structure with ultrathin NAOS oxide
The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles and become critical for...
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Electrochemical corrosion and oxidation resistances of Zr60Ni21Al19 bulk amorphous alloys
Electrochemical corrosion and oxidation resistances of Zr 60 Ni 21 Al 19 amorphous alloy were studied. The ternary amorphous alloy exhibits greater...
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Ultrasonic-assisted chemical oxidative cutting of multiwalled carbon nanotubes with ammonium persulfate in neutral media
A new, facile, and mild approach was developed to cut the conventional long and entangled multiwalled carbon nanotubes (MWCNTs) to short and...
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An isotopic labeling study of the diffusion mechanism during oxidation of Si(100) in water vapor by successive oxidation
The diffusion mechanism during the wet oxidation of Si(100) at 1373 K was investigated by successive oxidations finally containing isotopic water. SiO
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Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes
The effect of carbon monoxide on the capacitance-voltage characteristics of metal-oxide-semiconductor diodes of the Pd-SiO 2 - n -Si type and the time...
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ZnO films obtained by photoelectrothermal oxidation, their properties, and possibilities of practical application
Zinc oxide films of optical quality are obtained on single-crystal ZnSe substrates by the developed method of photoelectrothermal oxidation....
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Adsorption of O and CO on Ir(100) from first principles
The adsorption of O and CO on Iridium (100) surface with different coverages (Θ = 1.0, 0.5, 0.25 monolayer (ML)) is studied using density functional...
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Low energy emission bands in a small molecular fluorene derivative for organic light-emitting diodes
6,6 ′ -(9H-fluoren-9,9-diyl)bis(2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)quinoxaline) (BFLBBFLYQ) was a novel small molecular fluorene material with...
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Model of thermal oxidation of silicon at the volume-reaction front
A model of thermal oxidation of silicon, which interacts with an oxidizer at the volume-reaction front, is developed. The width of the reaction zone...
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Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment
Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the...