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1. Silicon nanowire array architecture for heterojunction electronics

   Photosensitive nanostructured heterojunctions n -TiN/ p -Si were fabricated by means of titanium nitride thin films deposition ( n -type conductivity) by...

   M. M. Solovan, V. V. Brus, ... S. L. Abashin in Semiconductors

   Article 21 April 2017

2. On methods of determining the band gap of semiconductor structures with p–n junctions

   The possibility of determining the band gap of homogeneous p–n structures from the properties of the current–voltage characteristics at two...

   I. M. Vikulin, B. V. Korobitsyn, S. K. Kriskiv in Semiconductors

   Article 16 September 2016

3. Enhanced Room Temperature Ferromagnetism in Fe-Doped Zinc Stannate Nanostructures Prepared by Facile Hydrothermal Method

   Pure and Fe-doped (1%, 3%, and 5%) zinc stannate (ZTO) nanostructures were prepared by facile hydrothermal method. Successful formation of inverse...

   S. Sumithra, N. Victor Jaya in Journal of Superconductivity and Novel Magnetism

   Article 18 January 2017
   

4. Electrical and photoelectric properties of CuInAsSe₃

   The electrical and photoelectrical properties of the polycrystalline compound CuInAsSe ₃ have been studied for the first time. The spectral and...

   F. S. Gabibov, E. M. Zobov, ... O. L. Kheifets in Physics of the Solid State

   Article 16 June 2015

5. Nuclear Medicine Physics

   Nuclear medicine physics is a subspecialty of medical physics. Nuclear medicine practice includes diagnostic procedures of imaging and non-imaging...

   Jianqiao Luo, Muhammad Maqbool in An Introduction to Medical Physics

   Chapter 2017
   

6. Basics of Optical Spectroscopy: Transmission and Reflection Measurements, Their Analysis, and Related Techniques

   This gives an introduction to the spectroscopy of optoelectronic semiconductors from an experimental point of view. Thus the basic measurements,...

   Juan Jimenez, Jens W. Tomm in Spectroscopic Analysis of Optoelectronic Semiconductors

   Chapter 2016
   

7. X-ray conductivity of ZnSe single crystals

   The experimental I – V and current–illuminance characteristics of the X-ray conductivity and X-ray luminescence of zinc-selenide single crystals...

   V. Ya. Degoda, G. P. Podust in Semiconductors

   Article 15 May 2016

8. Electromagnetic absorption and conductivity of organometallic TiOx–Py plasma compounds

   Organometallic compounds made of titanium oxide (TiOx) and pyrrole (Py) were synthesized by plasma to combine the photoelectronic activity of TiO and...

   Francisco González-Salgado, Maria Guadalupe Olayo, ... Guillermo J. Cruz in Applied Physics A

   Article 28 April 2016
   

9. Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg₃In₂Te₆ compound

   The results of studying the electrical and photoelectric properties of Hg ₃ In ₂ Te ₆ bulk crystals with stoichiometric composition and of Hg _{3(1 + δ)} In _2(1...

   O. G. Grushka, A. I. Savchuk, ... V. V. Shlemkevych in Semiconductors

   Article 09 October 2014

10. Electrical properties and I–V characteristics of 5,14-dihydro-5,7,12,14-tetraazapentacene doped Schottky barrier diode

    The current–voltage ( I – V ) characteristics of Aluminium/5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were...

    Hassan Ghalami Bavil Olyaee, Peter J. S. Foot, Vincent Montgomery in Journal of Theoretical and Applied Physics

    Article Open access 10 September 2015
    

11. Photogeneration process in bulk heterojunction solar cell based on quaterthiophene and CdS nanoparticles

    In this paper, the blended systems composed of organic oligothiophenes and CdS nanoparticles were investigated through their optical and...

    Aida Benchaabane, Zied Ben Hamed, ... Habib Bouchriha in Applied Physics A

    Article 01 July 2015
    

12. Intrasubband light absorption in a parabolic quantum well with consideration of scattering on the three-dimensional optical phonons

    Within the frameworks of the second order perturbation theory the light absorption by free carriers in a parabolic quantum well (QW) is investigated...

    A. H. Gevorgyan, E. M. Kazaryan, A. A. Kostanyan in Journal of Contemporary Physics (Armenian Academy of Sciences)

    Article 01 April 2016

13. Influence of intrinsic point defects and antimony impurity on the electronic structure and photoelectric properties of tin monosulfide

    The electronic structure calculations of defect-free tin monosulfide SnS as well as SnS with existing intrinsic point defects (vacancies in tin (V _Sn )...

    M. M. Bletskan, D. I. Bletskan, A. A. Grabar in Applied Physics A

    Article 26 April 2015
    

14. Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg_0.78Cd_0.22Te Grown by Molecular Beam Epitaxy

    Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the...

    A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh in Russian Physics Journal

    Article 04 June 2016

15. Photonic devices based on black phosphorus and related hybrid materials

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means...

    M. S. Vitiello, L. Viti in La Rivista del Nuovo Cimento

    Article 01 August 2016

16. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs_0.86Sb_0.14/AlSb quantum wells

    The optical characteristics of heterostructures with deep quantum wells are studied using the AlSb/InAs _0.86 Sb _0.14 /AlSb structure within the framework...

    N. V. Pavlov, G. G. Zegrya in Semiconductors

    Article 06 May 2015

17. Suppression of hole relaxation in small Ge/Si quantum dots

    We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p -type...

    A. I. Yakimov, V. V. Kirienko, ... A. V. Dvurechenskii in JETP Letters

    Article 01 November 2015

18. MBE-grown AlGaN/GaN heterostructures for UV photodetectors

    The MBE synthesis of AlGaN/GaN semiconductor heterostructures intended for UV photodetectors is considered. A technique for growing AlGaN layers and...

    T. V. Malin, A. M. Gilinskii, ... K. S. Zhuravlev in Technical Physics

    Article 29 April 2015

19. HgCdTe Detector Chip Technology

    As a pseudobinary system material with the characteristics of adjustable band gap, high optical absorption coefficient, long carrier lifetime, high...

    Li He, Dingjiang Yang, Guoqiang Ni in Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

    Chapter 2016
    

20. Nano-indentation Study and Photo-Induced Effects in Amorphous As2Se3:SnX Chalcogenides

    The mechanical characteristics of amorphous As2Se3:Sn prepared by thermal evaporation in vacuum on glass substrates heated to T...

    Diana Harea, Evghenii Harea, ... Mihail Iovu in Nanoscience Advances in CBRN Agents Detection, Information and Energy Security

    Conference paper 2015