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1. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe_{1 − x} S _x solid solution

   The current-voltage and capacitance-voltage characteristics of the n -CdS/ p -CdTe heterosystem are investigated. An analysis of the results obtained...

   Kh. Kh. Ismoilov, A. M. Abdugafurov, ... A. Yu. Leĭderman in Physics of the Solid State

   Article 13 November 2008

2. Ferroelectric polarization-controlled two-dimensional electron gas in ferroelectric/AlGaN/GaN heterostructure

   The control effect of the ferroelectric polarization on the two-dimensional electron gas (2DEG) in a ferroelectric/AlGaN/GaN...

   Y. C. Kong, F. S. Xue, ... Y. R. Li in Applied Physics A

   Article 10 December 2008

3. Properties of heterojunction based on pentacene and perylene derivatives

   With the purpose of develo** organic photosensitive cells with a wide photosensitivity spectrum and improved photogeneration characteristics, an...

   P. Y. Stakhira, V. V. Cherpak, D. Yu. Volynyuk in Semiconductors

   Article 10 February 2009

4. Static current-voltage characteristics of Au/CaF₂/n-Si(111) MIS tunneling structures

   Using molecular-beam epitaxy, Au/CaF ₂ / n -Si(111) structures were fabricated that exhibit lower currents at a given fluoride film thickness (1.5–2 nm)...

   S. M. Suturin, A. G. Banshchikov, ... M. I. Vexler in Semiconductors

   Article 01 November 2008

5. Properties of Mott contacts with an ultralow metal-semiconductor barrier

   The current-voltage and capacitance characteristics of Mott contacts with an ultralow metal-semiconductor barrier are investigated. The analysis is...

   V. I. Shashkin, A. V. Murel’ in Physics of the Solid State

   Article 12 October 2008

6. Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures

   The influence of the operating temperature on the electrical and optical stability of the Metal–Oxide–Silicon-based light-emitting device (MOSLED)...

   S. Prucnal, L. Rebohle, W. Skorupa in Applied Physics B

   Article 11 December 2008

7. Features of the capacitance-voltage characteristics in a MOS structure due to the oxide charge

   MOS structures based on p -and n -type silicon and subjected to the effect of voltages of both polarities with a magnitude as large as 70 V are...

   E. A. Bobrova, N. M. Omeljanovskaya in Semiconductors

   Article 01 November 2008

8. Fast optical recording media based on semiconductor nanostructures for image recording and processing

   Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 ⁶ cycle/s (which...

   P. G. Kasherininov, A. A. Tomasov in Semiconductors

   Article 01 November 2008

9. Mechanism of current hysteresis in reduced rutile TiO₂ crystals for resistive memory

   Memory devices based on the reversible resistance switching of various materials are attractive for today’s semiconductor technology. The...

   R. Dong, D. S. Lee, ... Hyunsang Hwang in Applied Physics A

   Article 01 November 2008

10. Memory properties of a Ge nanocrystal MOS device fabricated by pulsed laser deposition

    The charge–storage properties of Ge nanocrystal (Nc) memory devices with MOS structure have been studied. The Ge nanocrystals (Ncs) were prepared on...

    X. Ma, C. Wang in Applied Physics B

    Article 01 August 2008

11. Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

    The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg _{1 − x ...}

    A. V. Voitsekhovskii, S. N. Nesmelov, ... V. V. Vasiliev in Semiconductors

    Article 01 November 2008

12. Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

    The effect of irradiation with 12.5-MeV electrons on the electrical and photoelectric parameters of layered photoconverters based on p -InSe- n -InSe...

    Z. D. Kovalyuk, O. A. Politanska, ... V. T. Maslyuk in Semiconductors

    Article 01 November 2008

13. Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

    A mechanism of charge transport in Au-TiB _x - n -GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN...

    A. E. Belyaev, N. S. Boltovets, ... V. N. Sheremet in Semiconductors

    Article 13 June 2008

14. Contact barriers in a single ZnO nanowire device

    The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the...

    Kanghyun Kim, Haeyong Kang, ... Gyu-Tae Kim in Applied Physics A

    Article 19 July 2008

15. p-type ZnO films for preparation of p-n-junctions

    Photoelectrical properties of ZnO films doped with Li acceptor impurity and prepared by the electron-beam evaporation method were investigated. The...

    N. R. Aghamalyan, R. K. Hovsepyan, S. I. Petrosyan in Journal of Contemporary Physics (Armenian Academy of Sciences)

    Article 03 July 2008

16. Determining electrophysical characteristics of metal-oxide-semiconductor structures from the data of voltage-capacitance analysis of the depletion region of a semiconductor surface

    The oxide layer in nanotransistors with metal-oxide-semiconductor (MOS) structures may be as thin as 20Å. The physical diagnostics of such structures...

    G. V. Chucheva, R. D. Tikhonov, ... V. G. Naryshkina in Instruments and Experimental Techniques

    Article 30 July 2008

17. Diagnostics of low-barrier Schottky diodes with near-surface δ-do**

    To find the parameters of low-barrier Schottky diodes, a diagnostics technique based on an analysis of the dependence of the differential resistance...

    V. I. Shashkin, A. V. Murel’ in Semiconductors

    Article 01 April 2008

18. Structure and electrical properties of HfO₂ high-k films prepared by pulsed laser deposition on Si (100)

    High- k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films...

    Hao Wang, Y. Wang, ... Z. S. **ao in Applied Physics A

    Article 13 June 2008

19. Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier

    An analytical solution for the current-voltage characteristics of a metal-semiconductor contact with a Mott barrier is derived with allowance made...

    V. I. Shashkin, A. V. Murel’ in Physics of the Solid State

    Article 01 March 2008

20. Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage

    The crystal structure and surface morphology of native oxide emerging on the surface of the (0001) cleavage of undoped and Cd-doped or Dy-doped...

    S. I. Drapak, S. V. Gavrylyuk, ... O. S. Lytvyn in Semiconductors

    Article 01 April 2008