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Showing 21-40 of 4,033 results

  1. Stress, Strain and Magnetic Anisotropy: All Is Different in Nanometer Thin Films

    The application of the crystal curvature technique for stress measurements at surfaces and in films is presented. Important aspects regarding sample...
    Dirk Sander, Holger Meyerheim, ... Jürgen Kirschner in Advances in Solid State Physics
    Chapter

  2. New Trends and Approaches in the Development of Photonic IR Detector Technology

    This chapter focuses on new trends in the development of photon detectors and photodetectors arrays based on them. In particular, new strategies in...
    Ghenadii Korotcenkov, Igor Pronin in Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors
    Chapter 2023

  3. Charge transport studies on pulsed laser deposited grown manganite based thin film device

    Charge transport studies on pulsed laser deposition grown Y 0.95 Ca 0.05 MnO 3 (YCMO) thin film on (100) single crystalline Nb:SrTiO 3 (SNTO) substrate....

    Keval Gadani, Faizal Mirza, ... A. D. Joshi in Applied Physics A
    Article 03 April 2024

  4. Defect Engineering in Epitaxially Grown Cd(Zn)Te Thin Films on Lattice-Mismatch Substrates

    II–VI (Hg)(Cd)(Zn)Te semiconductors are significant materials with a wide range of applications in high-end infrared (IR) sensing/imaging, radiation...
    Wenwu Pan, Lorenzo Faraone, Wen Lei in Advances in Fabrication and Investigation of Nanomaterials for Industrial Applications
    Chapter 2024

  5. Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn

    Abstract

    The results of investigating the generation of strained nanoheterostructures based on compounds with materials of group IV (Ge, Si, Sn) are...

    A. S. Deryabin, A. E. Dolbak, ... V. A. Timofeev in Optoelectronics, Instrumentation and Data Processing
    Article 01 September 2020

  6. On the Growth, Structure, and Optical Reflection of Magnesium Silicide Films Grown on Porous Silicon under High-Vacuum Conditions

    Abstract

    The growth of magnesium silicide on porous silicon under high vacuum conditions (10 –5 –10 ‒6 Torr) without the chemical removal of silicon...

    Nikolay G. Galkin, Aleksandr V. Shevlyagin, ... Konstantin N. Galkin in Semiconductors
    Article 10 November 2023

  7. Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy

    We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II super-lattices (T2SLs) epitaxial...

    Zhaojun Liu, Lianqing Zhu, ... Yuan Liu in Optoelectronics Letters
    Article 27 March 2023

  8. Epitaxial Growth of III-Nitride LEDs

    This chapter introduces epitaxial growth of III-nitride blue/green/ultraviolet LEDs. Firstly, the epitaxial structure of GaN-based blue LED is...
    Shengjun Zhou, Sheng Liu in III-Nitride LEDs
    Chapter 2022

  9. Atomistic Aspects of Epitaxial Layer-Growth

    Crystal growth far from thermodynamic equilibrium is affected by kinetic barriers. This chapter describes nucleation and growth in terms of atomistic...
    Udo W. Pohl in Epitaxy of Semiconductors
    Chapter 2020

  10. Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers

    Abstract

    Effect of arsine (AsH 3 ) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor...

    I. Demir, I. Altuntas, S. Elagoz in Semiconductors
    Article 01 October 2021

  11. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

    Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers...

    Anas Elbaz, Dan Buca, ... Moustafa El Kurdi in Nature Photonics
    Article 16 March 2020

  12. Recent developments in CVD growth and applications of 2D transition metal dichalcogenides

    Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and...

    Hui Zeng, Yao Wen, ... Jun He in Frontiers of Physics
    Article Open access 17 May 2023

  13. Impact of high growth rates on the microstructure and vortex pinning of high-temperature superconducting coated conductors

    High-temperature superconducting REBa 2 Cu 3 O 7 (RE = rare earth or yttrium) coated conductors have emerged as a new class of materials with exceptional...

    Teresa Puig, Joffre Gutierrez, Xavier Obradors in Nature Reviews Physics
    Article 04 December 2023

  14. Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches

    Effects of selective carbon (C) incorporation in silicon (Si) quasi-read-avalanche-transit-time (QRATT) devices are studied through indigenously...

    Sulagna Chatterjee, Moumita Mukherjee in Applied Physics A
    Article 02 February 2021

  15. Improving the efficiency of micro-LEDs at high current densities employing a micro-current spreading layer-confined structure

    In this paper, a micro-current spreading layer (mCSL)-confined micro-LED is proposed and fabricated. The mCSL is used to restrict the current channel...

    **aoyan Liu, Zexing Yuan, ... Pengfei Tian in Applied Physics B
    Article 06 June 2022

  16. Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

    To meet the increasing demand of short-wavelength red lasers for laser display technology and medical applications, we propose a new short-wavelength...

    Jianan **e, Tao Lin, ... Chaoyang **e in Applied Physics B
    Article 03 March 2023

  17. Correction: Ab initio study of anisotropic mechanical and electronic properties of strained carbon-nitride nanosheet with interlayer bonding

    Unfortunately, the original article was published with wrong ESM files. The correct ESM files are replaced with the existing files.

    Hao Cheng, **-Cheng Zheng in Frontiers of Physics
    Article 02 August 2021

  18. Zincblende-Structure Materials (III–V)

    The following chapters will provide different examples including various semiconductor materials of contemporary interest and with diverse...
    Mathias Schubert in Infrared Ellipsometry on Semiconductor Layer Structures
    Chapter

  19. Photoconductive THz Detector Based on New Functional Layers in Multi-Layer Heterostructures

    Abstract

    Characteristics of photoconductive antennas (PCAs) based on InGaAs/InAs/InAlAs superlattice heterostructures exhibiting different types of...

    A. E. Yachmenev, D. V. Lavrukhin, ... D. S. Ponomarev in Optics and Spectroscopy
    Article 01 August 2021

  20. Low disorder and high valley splitting in silicon

    The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for...

    Davide Degli Esposti, Lucas E. A. Stehouwer, ... Giordano Scappucci in npj Quantum Information
    Article Open access 13 March 2024
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