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Showing 21-40 of 73 results
  1. Pulsed laser deposition of Co and growth of CoSi2 on Si(111)

    Monolayers of Co were prepared by pulsed laser deposition (PLD) and thermal deposition (TD) on Si(111) substrates. The surface structure and...

    M. Löffler, J. Cordón, ... T. Fauster in Applied Physics A
    Article 08 November 2005
  2. Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

    (200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of...

    T.L. Chen, X.M. Li, ... X. Zhang in Applied Physics A
    Article 01 January 2005
  3. IR absorption enhancement for ionized p -nitrobenzoic acid on silver island films epitaxially grown on the 7 × 7 reconstructed Si(111) surface

    An enhanced infrared absorption is reported for p-nitrobenzoic acid (PNBA) adsorbed on molecular-beam-epitaxially grown silver films at room...

    T. Wadayama, M. Takada, A. Hatta in Applied Physics A
    Article 01 February 2005
  4. Short-range order and twins in ordered titanium monoxide

    The structure of annealed titanium monoxide TiO 1.087 containing monoclinic ordered phase Ti 5 O 5 was studied by electron diffraction. Along with the...

    Article 01 May 2004
  5. \(\mathsf{\sqrt{3}}\) linear structures in the Te/Ni(111) system

    Surface structures in the Te/Ni(111) system are revealed by using reflection high-energy electron diffraction combined with X-ray and ultraviolet...

    Article 01 March 2004
  6. Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

    The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy...

    D. Reisinger , B. Blass , ... R. Gross in Applied Physics A
    Article 01 October 2003
  7. Buffer effects of titanium in the case of silver / α - Al 2 O 3(0001)

    The influence of thin titanium layers on the growth of silver clusters on α - Al 2 O 3 (0001) is investigated. We demonstrate through in situ RHEED...

    Article 01 June 2003
  8. Epitaxial growth and magnetic and electric properties of Co-doped thin films

    In this research, c -axis oriented epitaxial anatase TiO 2 thin films were grown on SrTiO 3 (100) substrates using a ceramic Ti 0.95 Co ...

    Article 01 April 2003
  9. GaAs (100)-(1X1) Structure Analysis from LEED Intensities

    GaAs (100)-(1X1) surface grown by molecular-beam epitaxy was studied by low energy electron diffraction (LEED). Intensities of diffraction spots were...

    O. Romanyuk, P. Jiříček, ... I. Bartoš in Czechoslovak Journal of Physics
    Article 01 January 2003
  10. Ruthenium dioxide, a fascinating material for atomic scale surface chemistry

    Over the past few years, RuO 2 has developed into one of the best-characterized late transition metal oxides in surface science, revealing unique and...

    H. Over in Applied Physics A
    Article 01 July 2002
  11. Structure of high-index GaAs surfaces – the discovery of the stable GaAs (2 5 11) surface

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting...

    K. Jacobi, L. Geelhaar, J. Márquez in Applied Physics A
    Article 01 July 2002
  12. Metastable structures of Dy layers adsorbed on Mo(112) and their transformations

    Ordering of dysprosium on Mo(112) up to 1.5 monolayers has been investigated by LEED and work function analysis after adsorption at 100 K and...

    Article 01 December 2001
  13. Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110)

    We demonstrate a very simple and reliable method of manufacturing clean, single-crystalline Y 2 O 3 films on Nb(110) substrates in situ. The method...

    J. Hayoz, M. Bovet, ... P. Aebi in Applied Physics A
    Article 01 December 2000
  14. Hydrogen for novel materials and devices

    We start by recalling some of the properties of hydrogen and present a summary of the phenomena caused by the reversible hydrogen sorption by metals...

    L. Schlapbach, A. Züttel, ... P. Aebi in Applied Physics A
    Article 01 February 2001
  15. From anisotropic dots to smooth RFe 2 (110) single crystal layers (R = rare earth)

    Single crystal RFe 2 (110) films were grown by molecular beam epitaxy to a total thickness of 1000 Å at different substrate temperatures ranging from...

    Article 01 January 2001
  16. Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

    The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its low-energy (230 eV) ions during heteroepitaxy from...

    A. V. Dvurechenskii, V. A. Zinovyev, ... Zh. V. Smagina in Journal of Experimental and Theoretical Physics Letters
    Article 01 August 2000
  17. Interplay of surface morphology, strain relief, and surface stress during surfactant mediated epitaxy of Ge on Si

    Lattice-mismatch-induced surface or film stress has significant influence on the morphology of heteroepitaxial films. This is demonstrated using Sb...

    P. Zahl, P. Kury, M. Horn von Hoegen in Applied Physics A
    Article 01 November 1999
  18. Change in the nature of the Ni diffusion mechanism on the Si(111) surface with adsorption of Co atoms

    The diffusion of Ni on a Si (111) surface is investigated by LEED and Auger electron spectroscopy. It is found that, in contrast to the process on...

    A. E. Dolbak, B. Z. Ol’shanetskii, ... R. A. Zhachuk in Journal of Experimental and Theoretical Physics Letters
    Article 01 November 1997
  19. Structural manipulation of ultrathin organic films on metal surfaces: the case of decane thiol/Au(111)

    (CH 2 ) 9 ]SH) have been adsorbed on Au(111) single crystals both via vacuum deposition and from an ethanolic solution. The epitaxial structure of the...

    R. Gerlach, G. Polanski, H.-G. Rubahn in Applied Physics A
    Article 01 October 1997
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