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1. Vitrification of and optical and photoelectrical properties of AgAsS₂, AgSbS₂, and AgBiS₂

   A study is made concerning the photoconductivity, the edge absorption, and the far-infrared spectra of AgAsS ₂ , AgSbS ₂ , AgBiS ₂ crystals and glasses....

   I. I. Golovach, V. S. Gerasimenko, ... A. V. Bogdanova in Soviet Physics Journal

   Article 01 March 1976

2. Transport Properties of Amorphous Semiconductors

   The investigation of transport properties of amorphous semiconductors in the past has been much stimulated by the interest in possible technical...

   W. Fuhs in Physics of Structurally Disordered Solids

   Chapter 1976
   

3. Photoelectrical resonant gate transistor (PRGT)

   PRGT is a photosensitive device with resonant properties compatible with the elements of microelectronics and integrated optics. The photosensitive...

   J. Burov, V. Hinkov in Optical and Quantum Electronics

   Article 01 November 1975

4. Optical and photoelectrical properties of glassy GeS _x

   Absorption edge, index of refraction, density and spectral dependence of the photoconductivity were measured on amorphous layers of stoichiometric...

   M. Závětová, A. Abrahám in Czechoslovak Journal of Physics B

   Article 01 December 1974

5. Energy band structure of the compounds AgGaS₂, AgGaSe₂, and AgGaTe₂

   Using the pseudopotential method the energy-band structure of the compounds AgGaS ₂ , AgGaSe ₂ , AgGaTe ₂ is calculated. Calculations are performed with...

   A. S. Poplavnoi, Yu. I. Polygalov, A. M. Ratner in Soviet Physics Journal

   Article 01 November 1974

6. Preparation and some physical properties of NbSe₂I₂ crystals

   J. Weissenstein, J. Horák in Czechoslovak Journal of Physics B

   Article 01 February 1974

7. Epitaxial periodic p-n structures in PbS

   The electrical and photoelectrical properites of periodic p-n structures in an epitaxial film of PbS are studied. The plane of the junctions is...

   L. M. Batukova, I. A. Karpovich, T. N. Yan'kova in Soviet Physics Journal

   Article 01 January 1974

8. Influence of Ge and Ag impurities on the thermal conductivity of semiconducting amorphous As₂Se₃

   The thermal conductivity of amorphous semiconducting As ₂ Se ₃ is studied in the temperature range from 100 to 300°K and the influence of germanium and...

   L. Štourač, B. T. Kolomiec, V. P. Šilo in Czechoslovak Journal of Physics B

   Article 01 January 1968

9. Planning in physics

   Following some introductory notes on science, a brief summary of the structure, contents and principal aims of the State Plan of Scientific Research...

   J. Vlachý in Czechoslovak Journal of Physics B

   Article 01 November 1968

10. Energy-band structure of ZnSiAs₂ and ZnGeP₂

    A. S. Poplavnoi in Soviet Physics Journal

    Article 01 September 1968

11. New books

    J. Vlachý in Cechoslovackij fiziceskij zurnal B

    Article 01 December 1964

12. Some photoelectric properties of the nucleic acid bases in thin layers

    The current-voltage characteristics of dark-conductivity and photoconductivity, the lux-ampere characteristics, the spectral dependence of...

    E. Šubertová, E. Silinsh, V. Prosser in Czechoslovak Journal of Physics B

    Article 01 March 1973

13. Luminescence

    Luminescence has not always been properly defined in previous literature, as has been pointed out in a recent book by Adirovich...

    G. F. J. Garlick in Light and Matter II / Licht und Materie II

    Chapter 1958
    

14. Die Halbleitereigenschften des Bors

    Die vorliegende Arbeit beschränkt sich fast ausschließlich auf β-rhomboedrisches Bor, da nur vereinzelte Untersuchungen der anderen Modifikationen...

    H. Werheit in Festkörperprobleme 10

    Chapter 1970
    

15. Isotype GaAs-CdS-heterojunctions

    V. M. Lupin, M. A. Petrov, P. E. Ramazanov in Soviet Physics Journal

    Article 01 June 1972

16. Radioisotope advances in the Lithuanian SSR

    S. Geciauskas, K. Valacka in Soviet Atomic Energy

    Article 01 March 1965

17. Electronic properties of glassy As₂Te₃

    Bulk samples of glassy As ₂ Te ₃ and its alloys with Ge, Si or Tl were prepared by quenching of the melt and their electrical, photoelectrical, optical...

    A. Abrahám, A. Hrubý, ... M. Závětová in Czechoslovak Journal of Physics B

    Article 01 November 1972

18. Contacts

    T. F. Connolly in Electrical Properties of Solids

    Chapter 1972