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Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications
Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive...
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An effective supramolecular metallohydrogel-based non-volatile memory device for application in logic gate circuit
There is a huge demand for storage capabilities in a variety of applications due to the recent explosion of emerging memory technologies. Memory...
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Bistable magnetic nanowires: A new approach to non-volatile memory with single readout and automatic deletion
AbstractA novel approach for a non-volatile destructive readout memory application using bistable magnetic nanowire arrays is presented. The encoded...
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Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications
Memory technologies are essential for transferring and preserving data. As the digital age progressed, memory device size, speed and efficiency were...
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Non-volatile Memory Application Based on Gd2O3 Nanorod
A non-volatile memory device based on Gd2O3 nanorod (NR) has been fabricated on a silicon (Si) wafer with the glancing angle deposition (GLAD)...
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TFT Structure Simulation with Various High K Dielectric Materials for Non-volatile Memory Device
In this rapidly growing and changing world of electronics industry it is very critical to have precise model and simulation for device. This paper...
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Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‑volatile capacitive memory application
The effect of structural modulations on non-volatile capacitive memory devices is reported in this paper. The synthesis of zirconium dioxide (ZrO 2 )...
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Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs
High-speed and low-power area-efficient memory solutions are in high demand in today’s smart and internet environment. To program and store data and...
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Design of non-volatile capacitive memory using axial type-II heterostructure nanowires of NiO/β-Ga2O3
The study presents a non-volatile memory (NVM) device created from an axial NiO-nanowire (NW)/β-Ga 2 O 3 -NW heterostructure (HS) using GLAD within the...
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Flash memory based on MoTe2/boron nitride/graphene semi-floating gate heterostructure with non-volatile and dynamically tunable polarity
Atomically thin two-dimensional (2D) materials are promising candidates to develop flash memories with premium performances as compared to...
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Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
This paper studies the deposition of Hafnium Oxide (HfO 2 ) thin films (TF) based on forming-free resistive random access memory (RRAM) devices using...
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Ultrafast non-volatile flash memory based on van der Waals heterostructures
Flash memory has become a ubiquitous solid-state memory device widely used in portable digital devices, computers and enterprise applications. The...
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Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices
The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have...
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Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired...
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Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices
Due to the growing popularity of wearable electronics, flexible memory devices are in great demand. The manufacturing method, materials synthesis,...
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Overview and outlook of emerging non-volatile memories
Memory technologies with higher density, higher bandwidth, lower power consumption, higher speed, and lower cost are in high demand in the current...
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Non-volatile electric-field control of inversion symmetry
Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground...
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Monolithic In2Se3–In2O3 heterojunction for multibit non-volatile memory and logic operations using optoelectronic inputs
Stable ferroelectricity at room-temperature down to the monolayer limit, harnessed with strong sensitivity towards visible-to-near-infrared...
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Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application
BaMn x Ti 1-x O 3 thin film on a silicon substrate has been prepared through the sol–gel spin coating process. The ferroelectric BaMn x Ti 1-x O 3 film shows...
