Search
Search Results
-
Tunable electrode-dependent switching characteristics of Se-Te-In chalcogenide thin films
Chalcogenide glasses have garnered significant interest as potential materials for the creation of high-density, three-dimensional stackable...
-
Influence of nano-clay platelet concentration on achieving a transition from write once read many (WORM) to complementary resistive switching (CRS) behaviour in organo-clay hybrid thin films for memory applications
Resistive memory devices are a promising technology, but they face challenges like sneak paths in crossbar arrays. Complementary resistive switching...
-
Engineering interfacial polarization switching in van der Waals multilayers
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it...
-
Electrical switching of a bistable moiré superconductor
Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements
1 –4 , superconducting...
-
Exchange-coupling enhanced: Tailoring structural and magnetic properties of Dy iron garnet ferrite nanoparticles via La substitution for switching devices
Nano particles with controlled oxygen vacancy, lower coercivity, and stronger magnetic saturation offer potential for innovative advances in...
-
All-optical switching of magnetization in atomically thin CrI3
Control of magnetism has attracted interest in achieving low-power and high-speed applications such as magnetic data storage and spintronic devices....
-
Study of current conduction mechanism and resistive switching stability in the PVdF-HFP-based memristor
The electrochemical metallization (ECM) memory using polymer materials has attracted much attention for the development of future information...
-
Biomemristor with Phototunable Resistive Switching Characteristics of a Neem (Azadirachta indica)-Carbon Quantum Dots Composite Thin Film
The biomemristor has gained considerable attention because of its exceptional scalability, remarkable flexibility, simplicity of processing, and low...
-
Understanding asymmetric switching times in accumulation mode organic electrochemical transistors
Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors in...
-
Multistep magnetization switching in orthogonally twisted ferromagnetic monolayers
The advent of twist engineering in two-dimensional crystals enables the design of van der Waals heterostructures with emergent properties. In the...
-
Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing
Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for...
-
Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
This paper presents the synthesis and characterization of cobalt and manganese co-doped zinc oxide (ZnO) ferromagnetic nanoparticles via a chemical...
-
Electrical switching of the edge current chirality in quantum anomalous Hall insulators
A quantum anomalous Hall (QAH) insulator is a topological phase in which the interior is insulating but electrical current flows along the edges of...
-
Electric-field-induced colour switching in colloidal quantum dot molecules at room temperature
Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active...
-
Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications
In this work, a CuO-GO nanocomposite-based device was fabricated which exhibited excellent free bipolar resistive switching (RS) phenomena. The...
-
Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications
The growth of titanium nitride (TiN) thin films with bulk TiN conductivity for inert electrode applications remains a challenge, owing to various...
-
Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications
Memory technologies are essential for transferring and preserving data. As the digital age progressed, memory device size, speed and efficiency were...
-
Photo-switching and conductive properties of polymeric deep eutectic solvent-based tungsten oxide–zinc oxide nanocomposites
The photo-switching of inorganic functional materials is receiving serious attention as smart materials for many applications. Herein, a mixture of...
-
Domino-like stacking order switching in twisted monolayer–multilayer graphene
Atomic reconstruction has been widely observed in two-dimensional van der Waals structures with small twist angles
1 –7 . This unusual behaviour leads...
-
Enriching oxygen vacancies in hematite (α-Fe2O3) films with Cu impurities for resistive switching applications
Resistive-switching memory device is a promising candidate for the quest in areas of non-volatile memory. Herein, iron (III) oxide (hematite, α-Fe 2 O 3 )...
