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1. Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure

   Abstract

   The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current...

   S. V. Gudina, V. N. Neverov, ... A. N. Vinichenko in Physics of Metals and Metallography

   Article 01 February 2024
   

2. Optical and electronic transport properties of epitaxial InGaAs and InAlAs in multilayer stacks

   The complex dielectric function ( ε  =  ε ₁  +  iε ₂ ) spectra of epitaxial In _0.53 Ga _0.47 As and In _0.52 Al _0.48 As in multilayer stacks were extracted by...

   Madan K. Mainali, Indra Subedi, ... Nikolas J. Podraza in Journal of Materials Science

   Article 07 June 2023
   

3. Simulation of Impact Ionization Coefficients in InAlAs/InAsSb Type-II Superlattice Material Systems

   We simulate transport for proposed low excess-noise avalanche photodiode InAlAs/InAsSb type-II superlattice materials to evaluate their impact...

   M. Winslow, S. H. Kodati, ... C. H. Grein in Journal of Electronic Materials

   Article 26 September 2021
   

4. High Responsivity and Speed of 3D Graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT Photodetector

   A high-responsivity 3D graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT two-dimensional electron gas (2DEG) photodetector is investigated and simulated...

   M. Khaouani, Z. Kourdi in Journal of Electronic Materials

   Article 23 September 2020

5. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

   We study the optical and vibrational properties of InAlAs alloy films on high-index InP (311)A/B substrate at a wide range of V/III flux ratio...

   Badreddine Smiri, Faouzi Saidi, ... Hassen Maaref in Journal of Materials Science: Materials in Electronics

   Article 29 May 2020
   

6. Plasmonic Metasurfaces for Controlling the Spectrum of Photoconductive THz Emitters

   Abstract

   Plasmonic metasurfaces for photoconductive antennas (PCAs) based on InAlAs/InGaAs superlattice heterostructures are proposed and fabricated....

   I. A. Glinskiy, A. E. Yachmenev, ... D. S. Ponomarev in Nanobiotechnology Reports

   Article 01 December 2022
   

7. Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

   Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The...

   Siyu Cao, Yue Zhao, ... Chuanbo Li in Nanoscale Research Letters

   Article Open access 03 January 2019
   

8. GaAsBi Quantum Dots for 1.55 μm Laser Diode

   Abstract

   Bi incorporations can reduce the bandgap of GaAs _1-x Bi _x . With a Bi content of 10.5%, GaAsBi is predicted to emit light at 1.55 μm. However,...

   Mingxuan Zhang, Liyao Zhang, ... Shuang Yao in Electronic Materials Letters

   Article 13 January 2021
   

9. Impact of SiO₂ hardmask on the DC and RF characteristics of InP HEMTs

   In this letter, we investigate the trade-off between parasitic capacitance and parasitic resistance of lattice-matched InP high-electron mobility...

   Fugui Zhou, Ruize Feng, ... Zhi ** in Journal of Materials Science: Materials in Electronics

   Article 20 October 2023
   

10. Analysis of High-Temperature Effects on \(InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As\) pHEMTs on Accessing RF/Analog performance: A Machine Learning Predictive Modeling

    G. Lakshmi Vara Prasad, Venkatagurunatham Naidu Kollu, ... G. Rajesh Chandra in Transactions on Electrical and Electronic Materials

    Article 09 November 2023
    

11. Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

    In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In _0.15 Al _0.85 As/GaAs _0.85 Sb _0.15 strain-reducing...

    A. Salhi, S. Alshaibani, ... M. Missous in Nanoscale Research Letters

    Article Open access 01 February 2019
    

12. Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes

    In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM...

    Siyu Cao, Yue Zhao, ... Qiming Wang in Nanoscale Research Letters

    Article Open access 21 May 2018
    

13. Multivalued DRAM

    Multiple-channel field-effect transistors (MCFETs) switch the current among different channels in the FET based on the applied voltage in its gate...

    Supriyo Karmakar in Journal of Electronic Materials

    Article 19 April 2023
    

14. Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al_0.30Ga_0.70As structures with different cap**/buffer quantum wells at annealing

    The emission variation with annealing in GaAs/Al _0.30 Ga _0.70 As structures with quantum dots of InAs (QDs) located in different cap**/buffer wells...

    R. Cisneros Tamayo, T. V. Torchynska, ... A. Stintz in Journal of Materials Science: Materials in Electronics

    Article 11 May 2023
    

15. X-Ray Techniques

    X-ray techniques are non-destructive material analysis methods to provide information about lattice constant, strain, material composition, layer...

    Henry H. Radamson in Analytical Methods and Instruments for Micro- and Nanomaterials

    Chapter 2023
    

16. Structural, microstructural and optical characteristics of lead-free (1−x)(BiFeO₃)–x(CaTiO₃) ceramics in submillimeter region

    Lead-free ceramic, (1− x )(BiFeO ₃ )– x (CaTiO ₃ ) with x values of 0, 0.6, 0.7, 0.8 and 1.0 (0 ≤  x  ≥ 1) were synthesized from BiFeO ₃ (BFO) and CaTiO ₃ (CTO)...

    Sreenu Gomasu, Chandan Ghorui, ... Dibakar Das in Journal of Materials Science: Materials in Electronics

    Article 29 February 2024
    

17. High-Performance pH Sensors Using Ion-Sensitive InGaAs-Channel MOSFETs at Sub-100 nm Technology Node

    This paper reports unique InGaAs-based ion-sensitive field-effect transistor (ISFET) sensor devices having a sensing gate in addition to the...

    Suprovat Ghosh, Suchismita Tewari, ... Amlan Chakrabarti in Journal of Electronic Materials

    Article 04 January 2021
    

18. Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR

    This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by...

    Waldemar Gawron, Łukasz Kubiszyn, ... Piotr Martyniuk in Journal of Electronic Materials

    Article Open access 29 August 2023
    

19. RF/analog Performance Assessment of High Frequency, Low Power In_0.3Al_0.7As/InAs/InSb/In_0.3Al_0.7As HEMT Under High Temperature Effect

    In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In _0.3 Al _0.7 As/InAs/InSb/In _0.3 Al _0.7 using Silvaco-TCAD. RF and...

    M. Khaouani, H. Bencherif, ... Z. Kourdi in Transactions on Electrical and Electronic Materials

    Article 17 November 2020
    

20. Growth and studies on structural, optical & time-domain terahertz spectroscopy of l-cysteine hydrochloride monohydrate single crystal for nonlinear optical applications

    In recent days, nonlinear optical materials are getting attention because of their potential applications in the area of lasers, optical sensing and...

    Sudha Yadav, Manju Kumari, ... Mukesh Jewariya in Journal of Materials Science: Materials in Electronics

    Article 03 July 2023