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Developments and Process Improvements Leading to High-Quality and Large-Area HgCdTe LPE Detectors
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
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Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors
HgCdTe epilayers grown by chemical vapor deposition (MOCVD) on GaAs substrates operating in the long-wave infrared range were characterized by the...
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Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
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Experimental Determination of the Dependence Between Spectral Response and Current–Voltage Characteristics for MWIR HgCdTe Detectors
Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in a joint laboratory run by VIGO Photonics...
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Passivation of InSb and HgCdTe Infrared Photodiodes by Polycrystalline CdTe
Mid-wavelength InSb and HgCdTe photodiodes (PDs) passivated with polycrystalline CdTe films have been studied. Passivating layers were deposited at...
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2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe
A 2D model for the annealing process after ion implantation in HgCdTe was established. The 2D model was based on the diffusion equations of Hg...
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Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized...
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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density
Cadmium telluride (CdTe) (211) epitaxial layers were grown on GaAs (211) substrates. These CdTe layers were annealed under tellurium overpressure at...
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Modulation Transfer Function Measurements by Electron-Beam-Induced Current of HgCdTe Planar Diode with Small Pitch and High Operating Temperature
Planar diodes usually present a potentially degraded modulation transfer function (MTF) for small pixels due to lateral diffusion of photo-generated...
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Telluride semiconductor nanocrystals: progress on their liquid-phase synthesis and applications
The synthesis of colloidal telluride semiconductor nanocrystals (CT-SNCs) is more challenging than that of chalcogenides, due to the smaller electron...
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A Calculation Method for Response Spectrum of Mercury Cadmium Telluride Infrared Focal Plane Arrays Detector
In this paper, a calculation method for the response spectrum of a mercury cadmium telluride (MCT) infrared focal plane detector was proposed. A...
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Electronic and optical properties of TMDs/Hg0.33Cd0.66Te
It is challenging to tune absorption of nanomaterials in the visible region for using them in optoelectronics applications. Heterostructures of...
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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the...
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Admittance of barrier nanostructures based on MBE HgCdTe
Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For...
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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques
The effect of As + ion implantation on the electrical properties of the near-surface layer of n -HgCdTe films grown by molecular beam epitaxy (MBE) on...
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Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures
This paper summarizes progress in metal organic chemical vapour deposition (MOCVD) technology achieved in recent years at the Institute of Applied...
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Influence of the CdZnTe Substrate Thickness on the Response of HgCdTe Detectors Under Irradiation: Modeling of the Substrate Luminescence
The most extensively used infrared (IR) detectors in astrophysics are based on mercury cadmium telluride (MCT) technology: the MCT light-sensitive...
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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques
Heteroepitaxial n -Hg 0.78 Cd 0.22 Te films with near-surface graded-gap layers were grown by molecular beam epitaxy and subjected to two-stage thermal...
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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies
Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature...
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Nanostructured ternary compound Hg(Cd)Te-based composite formed by ion bombardment Ag+ for hybrid photonics
The results of a study of composite structures p -(Ag 2 O-Hg 1− x Cd x Te ( x ~ 0.223)) based on nanosized silver oxide inclusions in a semiconductor matrix...
