Search
Search Results
-
Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy
Deep-level transient spectroscopy (DLTS) is a widely used method to analyze the properties of deep defects in semiconductors. However, it has been...
-
Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures
This study reports the investigation of the effect of cerium (Ce) dopant concentration on defect levels in Ce-doped ZnO/p-type Si (p-Si)...
-
Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides
Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However,...
-
Effect of the growth temperature on the formation of deep-level defects and optical properties of epitaxial BGaN
The electrical, optical, and high-resolution photoinduced transient spectroscopy (HRPITS) measurements are used for the characterization of boron...
-
DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC
In this study, nitrogen-doped 4 H -SiC samples were bombarded with 167 MeV xenon ions to a fluence of 1 × 10 8 cm −2 at 300 K prior to the fabrication of...
-
Photoluminescence (PL) Spectroscopy
This chapter deals with the fundamental of the photoluminescence (PL) spectroscopy and its applications to study the chemical reaction of molecules... -
Transient Properties and Analysis of Organic Photonic Devices
This chapter focuses on the transient properties of organic photonic devices such as OLEDs, OPDs, and emerging devices and the transient analysis... -
Transient piezoresistive sensors based on tolerable, safe, and semiconductive polypyrrole/vermiculite/alginate frameworks
The rapid development of flexible pressure sensors is driven by the fields of electronic skin, human–machine interaction, and health monitoring....
-
Deep Level Defects in GaN Grown at Low Temperature by Metalorganic Vapor Phase Epitaxy
Most of GaN-based light emitting diodes (LED) uses the structure of InGaN/GaN multiple quantum well (MQW) as the active layer in which GaN barrier... -
Suppression of Dexter transfer by covalent encapsulation for efficient matrix-free narrowband deep blue hyperfluorescent OLEDs
Hyperfluorescence shows great promise for the next generation of commercially feasible blue organic light-emitting diodes, for which eliminating the...
-
Photoluminescence kinetics of CsPbBr3 nanocrystals with urea as co-ligand by using ultrafast spectroscopy
All-inorganic CsPbX 3 (X = Cl, Br, I) nanocrystals (NCs) are widely recognized as promising materials for optoelectronic devices. This is due to their...
-
The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3
Defects created in lightly Sn-doped (2 × 10 16 cm −3 ) (010)-oriented bulk β-Ga 2 O 3 implanted with 1.2 MeV, 3 × 10 15 cm −2 197 Au + ions before and after...
-
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes
The electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes are identified by deep-level transient Fourier spectroscopy (DLTFS)....
-
Enhancing visible-light-driven NO oxidation through molecular‐level insights of dye-loaded sea sands
Natural minerals, abundant and easily obtained through simple physical processing, offer a cost-effective and environmentally friendly solution for...
-
Transient co-tuning of atomic Fe and nanoparticle facets for self-relaying Fenton-like catalysis
Fenton-like catalysts are important materials for degrading refractory organic pollutants, however, they still suffer from limited oxidizing ability....
-
Structure and luminescent properties of Mn4+-activated Li2Mg2TiO5 with broadband deep-red emission
In this work, we report a new series of non-rare-earth red phosphors, i.e., Mn 4+ -activated Li 2 Mg 2 TiO 5 phosphors prepared by conventional solid-phase...
-
Shallow defects and variable photoluminescence decay times up to 280 µs in triple-cation perovskites
Quantifying recombination in halide perovskites is a crucial prerequisite to control and improve the performance of perovskite-based solar cells....
-
The Plasmon-Enhanced Nanosensor Design and Experimental Schemes for Biosensing and Bioimaging
Through the incorporation of nanosensors, on-site screening for disease biomarkers is now possible instead of relying exclusively on laboratory... -
Peak shape analysis of deep level transient spectra: An alternative to the Arrhenius plot
A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the...
-
The Plasmon-Enhanced Nanosensor Design and Experimental Schemes for Biosensing and Bioimaging
Through the incorporation of nanosensors, on-site screening for disease biomarkers is now possible instead of relying exclusively on laboratory...