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Showing 1-6 of 6 results
  1. Flexible Organic Field-Effect Transistors Using Barium Titanate as Temperature-Sensitive Dielectric Layer

    Organic field-effect transistors (OFETs)-based flexible temperature sensors have been developed by using a ferroelectric material as a...
    Chapter 2021
  2. Alloy Production from High-Silica Manganese Ore and High-Ash Kazakhstan Coal

    Engineering principles are outlined for the production of silicon–aluminum–manganese alloy from high-silica manganese ore and high-ash Kazakhstan...

    E. K. Mukhambetgaliev, A. B. Esenzhulov, V. E. Roshchin in Steel in Translation
    Article 01 September 2018
  3. Synthesis, characterization and magnetic property of 3D flower-like nickel sulphide nanocrystals through decomposing bis(thiourea) nickel(II) chloride crystals

    Three-dimensional (3D) flower-like cubic Ni 3 S 4 nanoplates with single crystalline nature were successfully prepared through decomposing bis(thiourea)...

    PENG-FEI YIN, LI-LI SUN, ... CHENG-RONG DENG in Bulletin of Materials Science
    Article 13 February 2015
  4. Statistical theory of the hydrogen-induced phase decomposition of an amorphous zirconium-palladium alloy with the formation of metal hydrides. Hydrogen solubility in phases

    A statistical theory is developed for the decomposition of an amorphous zirconium-palladium alloy in a hydrogen atmosphere with the formation of...

    Z. A. Matysina, S. Yu. Zaginaichenko, D. V. Shchur in Russian Metallurgy (Metally)
    Article 01 January 2014
  5. Study of Trap** and Recombination in a-Si:H by Means of Infrared Enhancement Spectra of Photoconductivity

    IR re-excitation of non-equilibrium carriers in undoped a-Si:H has been used to probe the profile of the distribution of deep traps. In a dual-beam...

    Wu Wenhao, Qiu Changhua, ... Han Daxing in MRS Online Proceedings Library
    Article 01 December 1986
  6. Coplanar Transient Photocurrents and the Density of States in a-Si:H

    One of the most enduring concepts in amorphous semiconductors is that of a mobility gap (Mott, 1966). One-electron excitations of the semiconductor...
    Chapter 1985
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