Search
Search Results
-
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH 4 and B 2 H 6 precursors in 22 nm node CMOS technology were...
-
Semiconductors
Our technologically advanced way of life would not be possible without the semiconductor industry. The first semiconductor device, known as a...
-
Phase-Change Memory Device Architecture
In this chapter we review the main categories of device architectures that have been studied and realized in order to exploit the phase-change...
-
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has...
-
Influence of Design and Process Parameters of 32-nm Advanced-Process High-k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects
Negative-bias temperature instability (NBTI) has become a prominent factor limiting scaling of complementary metal–oxide–semiconductor technology....
-
A 100-V High-Performance SOI Trench LDMOS with Low Cell Pitch
In this paper, we report structural modifications in the conventional laterally diffused metal–oxide–semiconductor (LDMOS) field-effect transistor on...
-
Performance and Reliability of SiC Power MOSFETs
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices....
-
Dielectric Materials for Microelectronics
Dielectrics are an important class of thin-film electronic materials for microelectronics. Applications include a wide swathe of device applications,...
-
Impact of Metals on Silicon Devices and Circuits
This Chapter overviews the possible impact of metal impurities on the operation, reliability and yield of devices and circuits. In a first part, the...
-
A Novel Nanofabrication Technique of Silicon-Based Nanostructures
A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple...
-
Hybrid Memories Based on Redox Molecules
The attempt to use molecules as functional parts of nanoelectronic devices is based on the benefits expected from their inherent properties. They are...
-
Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
In this report we present results comparing lateral MOSFET properties of devices fabricated on Si-face (0001) and A-face (11-20) 4H-SiC, with nitric...
-
Metamorphic transistors: Building blocks for hetero-integrated circuits
Metamorphic epitaxy offers the possibility of growing devices on wafers composed of different materials that might be larger than the native bulk...
-
A roadmap for future wide bandgap semiconductor power electronics
Energy savings and efficient usage of electric power are some of the most urgent issues for future sustainable development of human society. Power...
-
-
Applications of three-dimensional LSI
To overcome various concerns due to scaling-down device size in future large-scale integration (LSI), it is indispensable to introduce a new concept...
-
Physical principles and current status of emerging non-volatile solid state memories
Today the influence of non-volatile solid-state memories on persons’ lives has become more prominent because of their non-volatility, low data...
-
A review of high-temperature electronics technology and applications
Electronics that must operate at extreme temperatures present a unique set of challenges that must be carefully addressed. We review the applications...
-
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic device roadmap to further improve future...
-
AlGaN devices and growth of device structures
The structure of a number of GaN/AlGaN devices and their associated material growth and processing issues are examined in some detail, and...
