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Overview of emerging memristor families from resistive memristor to spintronic memristor
Memristor is a fundamental circuit element in addition to resistor, capacitor, and inductor. As it can remember its resistance state even...
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Membranes with selective wettability for the separation of oil-water mixtures
The separation of oil-water mixtures is a widely utilized unit operation, used for handling a wide variety of mixtures from industry including:...
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RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10 5 cycles, and good...
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Resistive switching memory characteristics of Ge/GeO x nanowires and evidence of oxygen ion migration
The resistive switching memory of Ge nanowires (NWs) in an IrO x /Al 2 O 3 /Ge NWs/SiO 2 /p-Si structure is investigated. Ge NWs with an average diameter...
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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories
Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO x /W cross-points has been reported...
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Emerging Oxide Resistance Change Memories
The state of the art in resistance-based memory technology is presented. Recently memory technology has been focused on convergence towards...
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Porous Silicon-Based Mass Spectrometry
The literature on the use of porous silicon as a matrix to capture and assist in mass spectroscopy of molecular species is comprehensively reviewed....
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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge 0.5 Se 0.5 /W, as compared with Al/Cu/Ge 0.2 Se 0.8...
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New Resistive Switching Phenomena in Devices with Limited Active Metal Source
To better understand the mechanisms of creation and rupture of conductive filaments in resistive switching devices such as Cu/TaOx/Pt, with Cu and Pt...
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Properties of Carbon Nanotubes
After a brief reminder of the basics of carbon nanotubes regarding their morphology, structure, texture, and nanotexture, this chapter attempts to...
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Surface engineering for phase change heat transfer: A review
Owing to advances in micro- and nanofabrication methods over the last two decades, the degree of sophistication with which solid surfaces can be...
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On the importance of the structure in the electrical conductivity of fishbone carbon nanofibers
Carbon nanofibers (CNFs) have a remarkable electrical conductivity resulting highly attractive for different applications such as composites or...
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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO x /W structure with a Ti nanolayer at the Cu/TaO x interface...
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Development of a silicon oxide-based resistive memory device using a spin-on hydrogen silsesquioxane precursor
Resistive memory devices have the potential to replace flash technology due to their increased scalability, low voltage of operation, and...
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Firing of a Pulse and its Control Using a Novel Floating Electrode Bi-Resistive Device
A novel resistive device with a floating electrode (RFED) has been manufactured as a stack of layers Cu/TaO x /Pt/TaO x /Cu in a crossbar array...
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Resistive Switching Models by Ion Migration in Metal Oxides
Resistive switching in metal oxides is considered one of the most promising storage concept for future generations of nanoscaled nonvolatile...
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Titanium dioxide thin films for next-generation memory devices
The synthesis, structure, and electrical performances of titanium dioxide (TiO 2 and also doped TiO 2 ) thin films, a capacitor dielectric for dynamic...
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First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
Resistance change random access memories based on transition metal oxides had been recently proposed as promising candidates for the next generation...
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Processing and characterization of TLCP fibers reinforced by 1 wt% MWCNT
A thermotropic liquid crystalline polymer (TLCP) blend with 1 wt% multiwall carbon nanotubes (MWCNTs) was prepared by melt compounding. Morphological...
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Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches
Resistive switches are being explored as a candidate for ultra-dense memory as well as logic circuits. The advantages of the resistive switches...