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Showing 61-80 of 398 results

  1. II-VI Narrow Bandgap Semiconductors: Optoelectronics

    The main purpose of this chapter is to describe the applications and technology of II–VI narrow bandgap semiconductors, focussing on HgCdTe for...
    Ian M. Baker in Springer Handbook of Electronic and Photonic Materials
    Chapter 2017

  2. Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

    This paper presents recent developments at Commissariat à l’Energie atomique, Laboratoire d’Electronique et de Technologie de l’Information infrared...

    C. Cervera, O. Boulade, ... P. Castelein in Journal of Electronic Materials
    Article 14 September 2016

  3. Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

    We present our latest results on cooled p -on- n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current...

    D. Eich, W. Schirmacher, ... H. Figgemeier in Journal of Electronic Materials
    Article 30 May 2017

  4. Other Miscellaneous Semiconductors and Related Binary, Ternary, and Quaternary Compounds

    The ability to tailor the energy gap of semiconductorsSemiconductors , as a function of their applicationsApplications has led to Bandgap...
    Dongguo Chen, Nuggehalli M. Ravindra in Semiconductors
    Chapter 2019

  5. Foreword

    S. Sivananthan, Y. Anter, N. K. Dhar in Journal of Electronic Materials
    Article 13 July 2017

  6. Manipulation of domain-wall solitons in bi- and trilayer graphene

    Topological dislocations and stacking faults greatly affect the performance of functional crystalline materials 1 – 3 . Layer-stacking domain walls (DWs)...

    Lili Jiang, Sheng Wang, ... Feng Wang in Nature Nanotechnology
    Article 22 January 2018

  7. Modeling and Characterization of MTF and Spectral Response at Small Pitch on Mercury Cadmium Telluride

    Space applications are challenging infrared (IR) technologies, demanding the best system performance achievable. This requires covering the entire IR...

    J. Berthoz, R. Grille, ... D. Leclercq in Journal of Electronic Materials
    Article Open access 12 June 2015

  8. Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology

    A new type of crystal defect, which we call a rough structure, is reported in this work. The rough structure appears in large lattice mismatch...

    Quanzhi Sun, Yanfeng Wei, ... Ruiyun Sun in Journal of Electronic Materials
    Article 24 May 2016

  9. Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices

    Three II-VI wide bandgap compound semiconductors have been investigated for surface passivation of various photovoltaic devices. First part of this...

    Sneha Banerjee, Rajendra Dahal, Ishwara Bhat in MRS Advances
    Article 23 May 2016

  11. Confirmation of Auger-1 Minority-Carrier Lifetimes in Hg0.77Cd0.23Te and Prediction of Dark Current for Long-Wave Infrared Focal-Plane Arrays

    Minority-carrier lifetime measurements have been carried out on Hg 0.77 Cd 0.23 Te (111)B materials with gap suitable for detection in the Long-Wave...

    V. Destefanis, A. Kerlain in Journal of Electronic Materials
    Article 09 May 2016

  12. Epitaxial Crystal Growth: Methods and Materials

    Epitaxial growth of thin films of material for a wide range of applications in electronics, optoelectronics, and magneto-optics is a critical...
    Peter Capper, Stuart Irvine, Tim Joyce in Springer Handbook of Electronic and Photonic Materials
    Chapter 2017

  13. Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980

    This paper presents an interview with Dr Paul W. Kruse (1927–2012) on the early history of the semiconductor alloy mercury cadmium telluride (HgCdTe...

    Marion B. Reine in Journal of Electronic Materials
    Article 15 April 2015

  14. Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer

    Noise characteristics and resistance of semimetal-type mercury-cadmium-telluride quantum wells (QWs) at the liquid nitrogen temperature are studied...

    E. O. Melezhik, J. V. Gumenjuk-Sichevska, F. F. Sizov in Nanoscale Research Letters
    Article Open access 11 April 2016

  15. Bulk Crystal Growth: Methods and Materials

    This chapter covers the field of bulk single crystals of materials used in electronics and optoelectronics. These crystals are used in both active...
    Peter Capper in Springer Handbook of Electronic and Photonic Materials
    Chapter 2017

  16. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi

    Thallium-containing III-V (Tl-III-V) and bismuth-containing III-V (III-V-Bi) alloy semiconductors were first proposed as novel functional...
    Hajime Asahi in Springer Handbook of Electronic and Photonic Materials
    Chapter 2017

  17. Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

    We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n -type/barrier/ n -type (nBn) detectors for midwave infrared (MWIR)...

    Nima Dehdashti Akhavan, Gregory Jolley, ... Lorenzo Faraone in Journal of Electronic Materials
    Article 11 April 2015

  18. High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development

    The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs)...

    R. Bommena, S. Ketharanathan, ... S. Velicu in Journal of Electronic Materials
    Article 30 June 2015

  19. Narrow Bandgap II-VI Semiconductors: Growth

    The field of narrow bandgap II-VI semiconductors is dominated by the compound Hg1−xCdxTe (MCT ), although some Hg-based alternatives to this ternary...
    Peter Capper in Springer Handbook of Electronic and Photonic Materials
    Chapter 2017

  20. Complex Behavior of Time Response of HgCdTe HOT Photodetectors

    We report on the time response of higher-operating-temperature (HOT, T ∼200 K to 300 K) fast long-cutoff-wavelength infrared (LWIR) HgCdTe...

    J. Pawluczyk, J. Piotrowski, ... A. Piotrowski in Journal of Electronic Materials
    Article 10 June 2015
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