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Showing 41-60 of 398 results

  1. Colloidal quantum dots for thermal infrared sensing and imaging

    Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal...

    Shihab Bin Hafiz, Michael Scimeca, ... Dong-Kyun Ko in Nano Convergence
    Article Open access 05 March 2019

  2. Ion Beam Nanostructuring of HgCdTe Ternary Compound

    Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology...

    Aleksey B. Smirnov, Rada K. Savkina, ... Andrii A. Korchovyi in Nanoscale Research Letters
    Article Open access 02 May 2017

  3. Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy

    The capacitive characteristics of metal–insulator-semiconductor (MIS) structures based on the compositionally graded Hg 1−x Cd x Te created by molecular...

    A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh in Journal of Electronic Materials
    Article 13 February 2018

  4. Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe

    Photoluminescence decay (PLD) measurements have been performed on mid-wave infrared (MWIR) Hg-vacancy p -doped HgCdTe samples at temperatures ranging...

    B. Delacourt, P. Ballet, ... J. Rothman in Journal of Electronic Materials
    Article 14 August 2017

  5. Progress of infrared guided-wave nanophotonic sensors and devices

    Nanophotonics, manipulating light–matter interactions at the nanoscale, is an appealing technology for diversified biochemical and physical sensing...

    Yiming Ma, Bowei Dong, Chengkuo Lee in Nano Convergence
    Article Open access 02 April 2020

  6. Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe

    Undoped mid-wave infrared Hg 1− x Cd x Se epitaxial layers have been grown to a nominal thickness of 8–14  μ m on GaSb (211)B substrates by molecular beam...

    I. Madni, G. A. U. Membreno, ... L. Faraone in Journal of Electronic Materials
    Article 09 August 2018

  7. Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

    Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength infrared HgCdTe...

    M. Kopytko, A. Kębłowski, ... J. Rutkowski in Journal of Electronic Materials
    Article Open access 25 May 2017

  8. Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays

    Mercury cadmium telluride (HgCdTe) is one of the most commonly used material systems for infrared detection. The performance of infrared focal-plane...

    S. Mouzali, S. Lefebvre, ... J. Primot in Journal of Electronic Materials
    Article 17 May 2016

  9. Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs

    CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied...

    Emine Bakali, Yusuf Selamet, Enver Tarhan in Journal of Electronic Materials
    Article 21 May 2018

  10. Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

    This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam...

    M. Vaghayenegar, R. N. Jacobs, ... David J. Smith in Journal of Electronic Materials
    Article 14 April 2017

  11. Infrared Detectors

    Tellurium-based compounds such as cadmium telluride (CdTe) and mercury cadmium telluride (HgCdTe) have been used as infrared (IR) detectors for over...
    Gurinder Kaur Ahluwalia, Ranjan Patro in Applications of Chalcogenides: S, Se, and Te
    Chapter 2017

  12. Simulation of Small-Pitch HgCdTe Photodetectors

    Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength...

    Marco Vallone, Michele Goano, ... Heinrich Figgemeier in Journal of Electronic Materials
    Article 09 March 2017

  13. The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

    We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride...

    K. Jóźwikowski, J. Piotrowski, ... A. Rogalski in Journal of Electronic Materials
    Article Open access 21 April 2017

  14. Strain Analysis of CdTe on InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations

    The structural properties of CdTe layers grown by molecular beam epitaxy on (001) InSb substrates were assessed using high-resolution x-ray...

    Michael Liao, Calli Campbell, ... Mark Goorsky in Journal of Electronic Materials
    Article 10 August 2018

  15. InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

    We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs 0.9 Sb 0.1 -based hetero- p - i - n ...

    **chao Tong, Landobasa Y. M. Tobing, ... Dao Hua Zhang in Journal of Materials Science
    Article 18 June 2018

  16. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the...

    Y. Fourreau, K. Pantzas, ... V. Destefanis in Journal of Electronic Materials
    Article 03 May 2016

  17. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

    In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II...

    D. Benyahia, Ł. Kubiszyn, ... A. Rogalski in Nanoscale Research Letters
    Article Open access 05 July 2018

  19. Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si

    Mercury cadmium telluride (MCT) epilayers have been grown on CdTe/Si using molecular beam epitaxy and 8- μ m-deep mesa structures formed using plasma...

    Sina Simingalam, James Pattison, ... Mulpuri V. Rao in Journal of Electronic Materials
    Article 27 April 2016

  20. Electrochemical Infrared Spectroscopy

    As an application of infrared reflection absorption spectroscopy (IRAS) in the electrochemistry, electrochemical infrared spectroscopy (EC-IR) is...
    Shen Ye in Compendium of Surface and Interface Analysis
    Chapter 2018
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