Search

Search Results

1. Recent Developments in MBE Growth and Properties of Hg1-xCdxTe/CdTe Superlattices

   Hg1-xCdxTe-CdTe superlattices of both Type I and Type III have been grown for the first time using the molecular beam epitaxy technique. The...

   J. P. Faurie, K. C. Woo, S. Rafol in Two-Dimensional Systems: Physics and New Devices

   Conference paper 1986
   

2. Materials Characterization—Vital and Often Successful, Yet Still a Critical Problem

   A 1967 report of the National Materials Advisory Board (NMAB) on “The Characterization of Materials” gives the definition of characterization as...

   Don Groves, John B. Wachtman in Materials Characterization for Systems Performance and Reliability

   Chapter 1986
   

3. The existence region of the Hg_0.8Cd_0.2Te phase field

   The existence region of the Hg0.8Cd _0.2 Te phase field has been re-examined using three techniques: Hall measurements, p-n junction depth measurements...

   H. F. Schaake in Journal of Electronic Materials

   Article 01 September 1985

4. Epitaxy of CdTe on (100) GaAs

   Two epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a...

   L. A. Kolodziejski, R. L. Gunshor, ... C. Choi in MRS Online Proceedings Library

   Article 15 June 1985

5. Studies of Adhesion Failure Mechanisms at Metal-HgCdTe and ZnS-Ge Interfaces by SEM/SAM/EDX

   Advanced techniques for electron microscopic1 and electron spectroscopic2 characterization of surfaces and interfaces have ushered in an era of rapid...

   Gerald A. Garwood, Michael Ray in Advances in Materials Characterization II

   Chapter 1985
   

6. Hg_l-xCd_xTe-Cr Interface Reaction

   We summarize photoemission studies using Synchrotron Radiation of the formation of the HgCdTe-Cr interface at room temperature on in situcleaved...

   P. Philip, A. Wall, ... D. J. Peterman in MRS Online Proceedings Library

   Article 01 December 1984

7. Determination of liquidus temperatures of Hg-rich Hg-Cd-Te alloys by differential thermal analysis

   Liquidus temperatures have been measured for eight (Hg _1−x Cd _x ) _y Te _1−y compositions with 0.099 ≤ x ≤ 0.401 and 0.703 ≤ y ≤ 0.900 by differential thermal...

   P. J. Meschter, K. E. Owens, T. Tung in Journal of Electronic Materials

   Article 01 January 1985

8. A study of dendrites in quenched mercury-cadmium telluride

   Dendritic structures in quenched ingots of mercury-cadmium telluride have been investigated by electron microprobe analysis and metallographic...

   Chen Boliang, Shen Jie, Din Shuzheng in Journal of Electronic Materials

   Article 01 January 1984

9. Experimental determination of the mercury-rich corner of the Hg-Cd-Te phase diagram

   Liquid-phase epitaxial (LPE) growth of Hg _1−x Cd _x Te alloys from Hg-rich solutions has not been studied extensively owing to the relatively low...

   Paul E. Herning in Journal of Electronic Materials

   Article 01 January 1984

10. Precipitation of tellurium in (Hg, Cd)Te alloys

    The precipitation of tellurium in alloys of Hg _1−x Cd _x Te with x = 0.2 to 0.3 prepared under conditions of excess tellurium by the solid state...

    H. F. Schaake, J. H. Tregilgas in Journal of Electronic Materials

    Article 01 November 1983

11. Photoplasticity in HgCdTe

    A time delay has been observed in HgCdTe in the photoplastic response of these crystals. Both the magnitude of the time delay and the total change in...

    J. M. Galligan, J. Pellegrino, T. Manzur in MRS Online Proceedings Library

    Article 15 April 1983

12. Analysis of mercury cadmium telluride by energy dispersive analysis

    An electron microprobe analysis technique using energy dispersive spectrometry has been developed for rapid quantitative analysis of mercury cadmium...

    Donald C. Gillies in Journal of Electronic Materials

    Article 01 July 1982

13. The properties and applications of the Hg1−xCdxTe alloy system

    R. Dornhaus, G. Nimtz in Narrow-Gap Semiconductors

    Chapter 1983
    

14. Growth and properties of Hg_1-x Cd_x Te epitaxial layers

    The growth of epitaxial layers of mercury-cadmium-telluride (Hg _1-x Cd _x Te) with relatively low x (0.2-0.3) from Te-rich solutions in an open tube...

    Y. Nemirovsky, S. Margalit, ... I. Kidron in Journal of Electronic Materials

    Article 01 January 1982

15. The pseudobinary HgTe-CdTe phase diagram

    The complete pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to...

    F. R. Szofran, S. L. Lehoczky in Journal of Electronic Materials

    Article 01 November 1981

16. Ebic characterization of HgCdTe crystals and photodiodes

    The scanning electron microscope was used to evaluate crystal imperfections and surface conditions of HgCdTe photovoltaic detectors by the electron...

    M. Lanir, A. H. B. Vanderwyck, C. C. Wang in Journal of Electronic Materials

    Article 01 March 1979

17. Do** properties of selected impurities in Hg_1−x Cd_x Te

    The do** properties of selected impurities in Hg _1-x Cd _x Te have been determined. Primary emphasis is on elements from Groups IB and IIIA, expected...

    Eric S. Johnson, J. L. Schmit in Journal of Electronic Materials

    Article 01 January 1977

18. Infrared detectors and applications

    A large variety of methods for the detection of infrared radiation have been developed primarily over the last ten to twenty years. These include...

    J. O. Dimmock in Journal of Electronic Materials

    Article 01 May 1972