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Diagnostics of Hydrogen Macrodelamination in the Wall of a Bent Pipe in the System of Gas Mains
We study the intense hydrogen-induced delamination in the wall of a bent branch pipe after long-term operation at the gas-compressor station of the...
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Narrow Bandgap II-VI Semiconductors: Growth
The field of narrow bandgap II-VI semiconductors is dominated by the compound Hg1−xCdxTe (MCT ), although some Hg-based alternatives to this ternary...
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Estimation of the Kinetics of Fatigue Fracture by the Automated Analysis of Deformation Patterns on the Surfaces of Specimens with Central Holes
We develop a method for the digital-optical analysis of defects in materials with simultaneous measuring of several diagnostic parameters and...
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Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe
HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications....
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High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays
Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane...
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Study of Morphological Defects on Dual-Band HgCdTe on CdZnTe
HgCdTe dual-band epitaxial layers on lattice-matched CdZnTe substrates often have morphological defects. These defects, unlike normal void and...
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On the role of acoustic phonons in superconductivity
The macroscopic properties of the elasticity of simple (Nb) and complex (YBa 2 Cu 3 O 7 − x ) superconductors with a high critical temperature T ...
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Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates
This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological...
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On the problem of the superconducting transition temperature
A new equation is proposed to calculate the superconducting transition temperature using the dependences obtained earlier for the defect formation...
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Formation of gas-saturated defects in titanium alloys during vacuum-arc remelting
The formation of gas-saturated defects in titanium alloys during vacuum-arc remelting is studied theoretically and experimentally. The defects of a...
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Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays
Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane...
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High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs
HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller,...
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HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays
This paper describes molecular-beam epitaxy growth of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) dual-band device structures...
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A Study of the Method of Manufacturing Bimaterial Composite Parts through Semisolid Metal Processing
This work evaluated the method of manufacturing bimaterial composite parts by semisolid metal processing (SSP) through strain-induced melt-activated...
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Achieving Manufacturing Readiness for 6-Inch HgCdTe on Silicon
Six-inch HgCdTe-on-silicon wafer capability is important due to the increase in die size along with the reduction in pixel pitch. Successful...
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Some considerations on failure of solids and liquids
Failure phenomena in continuum media, either solids or liquids, can be regarded as a single physical phenomenon which mathematically can be...
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A system simulation of a production complex for fabrication of composites for electrotechnology
A system simulation of fabrication of fibrous composites of the (Nb-Ti) + Cu system is performed. The maximum yield of the finished product is...
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Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates
This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision...
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Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)Cd x Te on Si Substrates
In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt...