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Unipolar superlattice structures based on MBE HgCdTe for infrared detection
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. A wide-gap Hg 1- x Cd x Te ( x =...
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Mixed-dimensional van der Waals heterostructures: Synthesis, properties, and applications
Mixed-dimensional van der Waals (vdW) hetero-integration, in which different materials are physically assembled through vdW forces, offers a...
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Performance Limits of III–V Barrier Detectors
Minority-carrier lifetimes and diffusion lengths have been deduced from a comparison of band structure simulations and experimental measurements on...
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In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe
We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd 1− y Zn...
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InSb/Ti2O3 pn heterojunctions: optoelectronic properties and NIR photovoltaic response
This work constructed transverse and longitudinal pn heterojunctions of InSb and Ti 2 O 3 thin films and assessed the optoelectronic properties of the...
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Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth
We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor....
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InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection
Type-II superlattices based on In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 (5 nm/5 nm) lattice-matched to InP substrates are investigated for short-wavelength...
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Shockley–Read–Hall Lifetime Study and Implication in HgCdTe Photodiodes for IR Detection
The Shockley–Read–Hall (SRH) mechanism might be a limiting factor of an infrared (IR) photodiode's dark current. This limitation is twofold. SRH...
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Group II–VI Semiconductors
II–VI semiconductorsSemiconductors (compounds formed by group IIB metallic elements (Cd, Zn, and Hg) with group VI nonmetallic elements (O, S, Se,...
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Surface Studies on HgCdTe Using Non-aqueous Iodine-Based Polishing Solution
Bromine- and iodine-based solutions were compared for surface preparation of HgCdTe epilayers. The iodine (I)–potassium iodide (KI)-based non-aqueous...
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Analysis of Carrier Transport in n-Type Hg1−xCdxTe with Ultra-Low Do** Concentration
Mercury cadmium telluride (HgCdTe, or MCT) with low n -type indium do** concentration offers a means for obtaining high performance infrared...
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Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays
Combined optical and electrical simulations of infrared HgCdTe-based focal plane arrays under broadband, non-monochromatic illumination are...
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Recent developments of infrared photodetectors with low-dimensional inorganic nanostructures
Low-dimensional inorganic nanostructures such as quantum dots as well as one- and two-dimensional nanostructures are widely studied and already used...
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CdZnTe Substrate Surface Preparation Technology at ASELSAN, Inc. for Molecular Beam Epitaxy Growth of High Quality HgCdTe Epilayers
High quality CdZnTe substrates with 4% ZnTe mole fraction are used for epitaxial growth of HgCdTe infrared detector layers. Molecular Beam Epitaxy...
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Short-wave infrared organic phototransistors with strong infrared-absorbing polytriarylamine by electron-transfer do**
Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial...
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Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Do** Density
Ultra-low-doped mercury cadmium telluride (HgCdTe, or MCT) is of significant interest for infrared detectors designed to suppress Auger...
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Optical Properties of MBE-Grown Hg1−xCdxSe
In this work, we present a study on the temperature-dependent infrared absorption spectra of Hg 1− x Cd x Se grown by molecular beam epitaxy (MBE) on GaSb...
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Composition and Face Polarity Influences on Mechanical Properties of (111) Cd1−yZnyTe Determined by Indentation
(111)-oriented CdZnTe semiconductor material exhibits a crystal polarity and hence, a face terminated by Cd atoms, conventionally called (111) A face...
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NIR Fluorescent Nanoprobes and Techniques for Brain Imaging
Currently, near infrared (NIR) fluorescence imaging is widely used for non-invasive visualization of deep tissues at the whole-body level, because of...
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NIR-Persistent Luminescence Nanoparticles for Bioimaging, Principle and Perspectives
The development of nanoparticles for NIR imaging and diagnostics is an area of considerable interest. Among the different imaging modalities, optics...