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  1. Growth and Magnetotransport Properties of Thin Co2MnGe Layered Structures

    Co2MnGe and other related Heusler alloys are investigated in the context of magnetotransport properties in multilayer (ML) structures. The most...
    Thomas Ambrose, Oleg Mryasov in Half-metallic Alloys
    Chapter
  2. Charge Transport and Catalysis by Molecules Confined in Polymeric Materialsand Application to Future Nanodevices for Energy Conversion

    Polymeric materials confining functional molecules are one of the most promising materials for designing nanodevices for energy conversion, e.g.,...
    Masayuki Yagi, Masao Kaneko in Emissive Materials Nanomaterials
    Chapter
  3. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Chapter
  4. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter
  5. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    Chapter
  6. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter
  7. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter
  8. High-Density Integration

    Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
    Chapter
  9. A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films

    The electrical properties of Bi-based layer-structured perovskite compounds strongly depend on their anisotropic crystal structure. Because of...
    Chapter
  10. Chain \protect\mbox{FeRAMs}

    A chain FeRAM (TM) is a solution for future high-density and high-speed nonvolatile memory. One memory cell consists of one transistor and one...
    Daisaburo Takashima, Yukihito Oowaki in Ferroelectric Random Access Memories
    Chapter
  11. Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

    Recent research by our group, concerned with the preparation of ferroelectric thin films by MOCVD, is summarized. MOCVD has been investigated as a...
    Chapter
  12. Spiro Compounds for Organic Electroluminescence and Related Applications

    A comprehensive review about functional spiro compounds, their synthesis, physical properties and applications in optoelectronic devices is given.
    R. Pudzich, T. Fuhrmann-Lieker, J. Salbeck in Emissive Materials Nanomaterials
    Chapter
  13. Polyphenylene-type Emissive Materials: Poly(para-phenylene)s,Polyfluorenes, and Ladder Polymers

    This ‘chapter’ reviews the synthesis of the various classes of polyphenylene-based materials that have been investigated as active materials in...
    Andrew C. Grimsdale, Klaus Müllen in Emissive Materials Nanomaterials
    Chapter
  14. Conducting Polymer Nanomaterials and Their Applications

    A paradigm shift takes place in the fabrication of conducting polymers from bulky features with microsize to ultrafine features with nanometer range....
    Chapter
  15. Nanoscale Phenomena in Ferroelectric Thin Films

    In this chapter, recent progress in our group in the area of thin-film ferroelectrics is reviewed. The specific focus is on nanoscale...
    Valanoor Nagarajan, Chandan S. Ganpule, Ramamoorthy Ramesh in Ferroelectric Random Access Memories
    Chapter
  16. Ferroelectric Technologies \newline for Portable Equipment

    Key technologies for portable equipment are low-voltage operation, low power consumption, and protocol-flexibility. Ferroelectric technology...
    Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu in Ferroelectric Random Access Memories
    Chapter
  17. Static and Dynamic Properties of Domains

    The static domain pattern of ferroelectric thin films results from the crystal structure of the film and the misfit strain caused by the...
    Rainer Waser, Ulrich Böttger, Michael Grossmann in Ferroelectric Random Access Memories
    Chapter
  18. Half-Metallicity and Slater-Pauling Behavior in the Ferromagnetic Heusler Alloys

    A significant number of the intermetallic Heusler alloys have been predicted to be half-metals. In this contribution we present a study of the basic...
    Iosif Galanakis, Peter H. Dederichs in Half-metallic Alloys
    Chapter
  19. Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

    Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of...
    Hiro Akinaga, Masaki Mizuguchi, ... Masafumi Shirai in Half-metallic Alloys
    Chapter
  20. Magnetism and Structure of Magnetic Multilayers Based on the Fully Spin Polarized Heusler Alloys Co2MnGe and Co2MnSn

    Our Introduction starts with a short general review of the magnetic and structural properties of the Heusler compounds which are under discussion in...
    K. Westerholt, A. Bergmann, ... H. Zabel in Half-metallic Alloys
    Chapter
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