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Polyphenylene-type Emissive Materials: Poly(para-phenylene)s,Polyfluorenes, and Ladder Polymers
This ‘chapter’ reviews the synthesis of the various classes of polyphenylene-based materials that have been investigated as active materials in...
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Conducting Polymer Nanomaterials and Their Applications
A paradigm shift takes place in the fabrication of conducting polymers from bulky features with microsize to ultrafine features with nanometer range....
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Chain \protect\mbox{FeRAMs}
A chain FeRAM (TM) is a solution for future high-density and high-speed nonvolatile memory. One memory cell consists of one transistor and one...
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Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD
Recent research by our group, concerned with the preparation of ferroelectric thin films by MOCVD, is summarized. MOCVD has been investigated as a...
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Carrier Dynamics in III--Nitrides Studied by Time-Resolved Photoluminescence
Recent results on time-resolved photoluminescence (PL) studies for Al-rich AlGaN alloys, InAlGaN quaternary alloys, InGaN/InAlGaN and GaN/AlN...
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Ultrafast Coherent Dynamics in Semiconductor Quantum Dots
In this chapter we will review the studies on ultrafast coherence phenomena of self-assembled semiconductor quantum dots (SAQDs). These...
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Nanoscale Phenomena in Ferroelectric Thin Films
In this chapter, recent progress in our group in the area of thin-film ferroelectrics is reviewed. The specific focus is on nanoscale...
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Ferroelectric Technologies \newline for Portable Equipment
Key technologies for portable equipment are low-voltage operation, low power consumption, and protocol-flexibility. Ferroelectric technology...
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Generation of Coherent Acoustic Phonons in Nitride-Based Semiconductor Nanostructures
In this chapter, we review experimental and theoretical aspects of coherent acoustic phonon generation in nitride-based semiconductor...
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Static and Dynamic Properties of Domains
The static domain pattern of ferroelectric thin films results from the crystal structure of the film and the misfit strain caused by the...
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The Calculation of Free-Energiesin Semiconductors: Defects, Transitionsand Phase Diagrams
In this chapter we review a series of novel techniques that make possible the efficient calculation of free energies in condensed-matter systems,...
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Marker-Method Calculations for Electrical Levels Using Gaussian-Orbital Basis Sets
The introduction of defect-related states in the bandgap of semiconductors can be both advantageous and deleterious to conduction, and it is...
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Femtosecond X-Rays and Structural Dynamics in Condensed Matter
In this chapter, some of the recent advancements in the nascent field of femtosecond X-ray scattering are reviewed. First, we discuss selected...
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Index
Index
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Materials Integration Strategies
In this chapter, materials integration strategies for the fabrication of high-density nonvolatile ferroelectric random access memories...
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The FET-Type FeRAM
The current status of the fabrication and integration of ferroelectric-gate field effect transistors (FETs) is reviewed. Novel applications of...
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Operation Principle and Circuit Design Issues
This chapter provides an introduction to the circuit design aspects of ferroelectric random access memories (FeRAM). A FeRAM stores binary data...
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Testing and Reliability
In ferroelectric random access memories (FeRAMs), the difference in the displacement charge between the two polarization states is fundamental...
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Characterization by Scanning Nonlinear Dielectric Microscopy
A sub-nanometer resolution scanning nonlinear dielectric microscopy (SNDM) was developed for the observation of ferroelectric polarization. We...
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The Current Status of FeRAM
Ferroelectric nonvolatile memories (FeRAM) have been mass-produced since 1992 and densities up to 256 kb are currently available in a range of...