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  1. Ultrafast Scanning Tunneling Microscopy: Principles and Applications

    The growing field of nanotechnology requires special tools capable of probing ultrafast surface dynamics on atomic scales in order to unveil...
    Dzmitry A. Yarotski, Antoinette J. Taylor in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  2. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    James F. Scott in Ferroelectric Random Access Memories
    Chapter

  3. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter

  4. Terahertz Radiation from Semiconductors

    We provide a review of the different schemes for generating terahertz (THz) radiation using photoconductive emitters excited by femtosecond...
    Jie Shan, Tony F. Heinz in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  5. Spontaneous Emission from Semiconductors After Ultrafast Pulse Excitation: Theory and Simulation

    In this chapter, we review the recent progress in the theoretical description of ultrafast phenomena in the spontaneous emission of pulse-excited...
    Karsten Hannewald, Stephan Glutsch, Friedhelm Bechstedt in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  6. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter

  7. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter

  8. A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films

    The electrical properties of Bi-based layer-structured perovskite compounds strongly depend on their anisotropic crystal structure. Because of...
    Kazumi Kato in Ferroelectric Random Access Memories
    Chapter

  9. High-Density Integration

    Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
    Kinam Kim in Ferroelectric Random Access Memories
    Chapter

  10. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Koukou Suu in Ferroelectric Random Access Memories
    Chapter

  11. Empirical Molecular Dynamics: Possibilities, Requirements, and Limitations

    Classical molecular dynamics enables atomistic structure simulations of nanoscopic systems to be made. The method is extremely powerful in solving...
    Kurt Scheerschmidt in Theory of Defects in Semiconductors
    Chapter

  12. Defect Theory: An Armchair History

    This introductory chapter begins with a summary of the developments of the theory of defects in semiconductors in the past 50 years. This is followed...
    David A. Drabold, Stefan K. Estreicher in Theory of Defects in Semiconductors
    Chapter

  13. Quasiparticle Calculations for Point Defects at Semiconductor Surfaces

    We present a quantitative parameter-free method for calculating defect states and charge-transition levels of point defects in semiconductors. It...
    Arno Schindlmayr, Matthias Scheffler in Theory of Defects in Semiconductors
    Chapter

  14. Light Induced Effects in Amorphous and Glassy Solids

    In this Chapter, we discuss how exposure to light can affect the properties of disordered materials and review our recent computational studies of...
    S. I. Simdyankin, S. R. Elliott in Theory of Defects in Semiconductors
    Chapter

  15. Defects in Amorphous Semiconductors: Amorphous Silicon

    Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between...
    D.A. Drabold, T.A. Abtew in Theory of Defects in Semiconductors
    Chapter

  16. Dynamical Matrices and Free Energies

    The calculation of the entire dynamical matrix of a periodic supercell (containing a defect or not) provides several most useful pieces of...
    Stefan K. Estreicher, Mahdi Sanati in Theory of Defects in Semiconductors
    Chapter

  17. Multiscale Modeling of Defectsin Semiconductors:A Novel Molecular-Dynamics Scheme

    Now that the modeling of simple semiconductor systems has become reliable, accurate and routine, attention is focusing on larger scale, more complex...
    Gábor Csányi, Gianpietro Moras, ... Alessandro De Vita in Theory of Defects in Semiconductors
    Chapter

  18. Supercell Methods for Defect Calculations

    Periodic boundary conditions enable fast density-functional-based calculations for defects and their complexes in semiconductors. Such calculations...
    Risto M. Nieminen in Theory of Defects in Semiconductors
    Chapter

  19. Charge Transport and Catalysis by Molecules Confined in Polymeric Materialsand Application to Future Nanodevices for Energy Conversion

    Polymeric materials confining functional molecules are one of the most promising materials for designing nanodevices for energy conversion, e.g.,...
    Masayuki Yagi, Masao Kaneko in Emissive Materials Nanomaterials
    Chapter

  20. High-performance 1D CsPbBr3/CdS photodetectors

    The emergence of all-inorganic perovskite CsPbBr 3 has ignited significant interest in optoelectronic devices, However, CsPbBr 3 thin film-based...

    Zhi-Lin **ang, Qiu-Hong Tan, ... Qian-** Wang in Rare Metals
    Article 03 July 2024
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