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1.5 Junction Field Effect Transistor—JFET
HereJunction field effect transistor (JFET) is the second active device in the series. Its fundamental difference with respect to the BJT is the fact...
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Metal Oxide Semiconductor Field Effect Transistor
This chapter investigates the basic properties, structure and operation of the silicon metal oxide semiconductor field effect transistor (MOSFET)...
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A Novel Dual Metal Double Gate Grooved Trench MOS Transistor: Proposal and Investigation
Through this paper, we have propounded and investigated a novel structure of a grooved trench MOS transistor with double gate architecture using TCAD...
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A new stacked gate oxide L-shaped tunnel field effect transistor
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates...
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Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application
A compact model for the drain current of a double-gate tunnel field-effect transistor (TFET) operating in the subthreshold and super-threshold...
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Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis
Steep subthreshold slope and high current on–off ratio are among the major challenges of tunnel field-effect transistors (TFETs) for low-power...
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Comparative Analysis of Negative Capacitance Double Gate Junctionless Transistor and Tri-Gate FinFET for Analog Performance
In this paper, the comparative analysis of two device structures has been proposed for analog and RF performance i.e. double gate junctionless...
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Effect of Various Structure Parameters on Electrical Characteristics of Double Gate FinFET
In this research work the transfer characteristics of the n-channel double gate fin field-effect transistor (DG FinFET) are optimized for various...
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Assessment of Hetero-Structure Junction-Less Tunnel FET’s Efficacy for Biosensing Applications
This work discusses a junction-less nanowire tunnel field effect transistor (JLN-TFET) that combines the advantages of a junction-less field effect...
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Heterojunction Tunnel Field-Effect Transistors
The tunnel field-effect transistor (TFET) relies on interband tunneling to achieve subthreshold swing below the 60 mV/dec fundamental limit at room...
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Field-Effect Transistors
This chapter uses insight to explain how junction and metal–oxide–semiconductor (MOS) field-effect transistors (FETs) block and conduct current. It...
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Performance Assessment of Electrostatically Doped Dual Pocket Vertical Tunnel Field-Effect Transistor
A recent do**-less (DL) charge plasma tunnel FET (TFET) structure has been suggested to diminish ambipolar features with improved analog/RF figure...
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Drain Current and Transconductance Analysis of Double-Gate Vertical Doped Layer TFET
Due to its sharp subthreshold swing and low leakage current, VDL-TFET has become a potential option for low-power electronic devices. In this study,...
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Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle
We use the superposition method to model the electrostatic characteristics of a high- k stacked gate-all-around heterojunction tunneling field-effect...
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Classification of IC Products by Manufacturing Processes
The invention of the first IC by Jack Kilby in 1958 led to the bipolar junction transistor (BJT) process, while the first planar IC process conceived...
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An investigation of a suppressed-drain cylindrical gate-all-around retrograde-doped heterospacer steep-density-film tunneling field-effect transistor
The effect of retrograde do** with a high-density layer on the performance of a cylindrical (cyl.) gate-all-around (GAA) tunneling field-effect...
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Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor
We present a two-dimensional (2-D) analytical modeling of the surface potential of a double-gate vertical t-shaped tunnel field-effect transistor...
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High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis
High Electron Mobility Transistor (HEMT) attained great interest because of its superior electron transport making it suitable for applications in...
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2D Structures Based Field-Effect Transistors (Review)
AbstractWe review the design and main parameters of field-effect transistors based on 2D structures of transition metal di- and trichalcogenides MoS 2 ...
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Field-Effect Transistors Based on Two-dimensional Materials (Invited)
In the quest for ultra-low-power electronics and integrating more and more functionality in an integrated circuit (IC), the semiconductor industry...
