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Mathematical Model of Electric Polarization Switching in a Ferroelectric Capacitor for Ferroelectric RAM
In this paper a mathematical model of polarization switching in a ferroelectric capacitor has been developed. This model reflects adequately...
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New-Generation Ferroelectric AlScN Materials
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in...
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Investigation of Normally-Off β-Ga2O3 Power MOSFET Using Ferroelectric Gate
In this paper, we present a normally-off beta-gallium oxide (β-Ga2O3) metal–oxide–semiconductor field-effect transistor (MOSFET) with ferroelectric...
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Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide
To develop low-power, non-volatile computing-in-memory device using ferroelectric transistor technologies, ferroelectric channel materials with...
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A ferroelectric-gate fin microwave acoustic spectral processor
Wireless communication through dynamic spectrum allocation is essential to accommodate increasing data traffic. This requires massive arrays of...
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A scalable ferroelectric non-volatile memory operating at 600 °C
Non-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics....
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Negative differential capacitance in ultrathin ferroelectric hafnia
Negative differential capacitance in ferroelectrics, which can be stabilized using a dielectric, could be used to overcome the limitations of...
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Ferroelectric-controlled graphene plasmonic surfaces for all-optical neuromorphic vision
Artificial visual systems can recognize desired objects and information from complex environments, and are therefore highly desired for pattern...
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Vortex domain structures induced by strain gradient reduce ferroelectric brittleness
The shear failure of ferroelectric material is hard to investigate because of the electromechanical properties of the material and its high speed at...
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Multi-field Coupled Inverse Hall–Petch Relations for Ferroelectric Nanocrystals
Tailoring grain size can improve the strength of polycrystals by regulating the proportion of grains to grain boundaries and the interaction area. As...
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Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide
AbstractDemonstrated the influence of buffer layers of group IVB oxides on the electrophysical characteristics of ferroelectric memory storage...
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Dual-frequency piezoelectric micromachined ultrasound transducer based on polarization switching in ferroelectric thin films
Due to its additional frequency response, dual-frequency ultrasound has advantages over conventional ultrasound, which operates at a specific...
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Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and...
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Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET
Lowering power consumption has emerged as the primary goal as silicon circuits become more compact. Furthermore, the ultra-highly integrated circuit...
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Sputtered HfO2/ZrO2 Induced Interfacial Ferroelectric HZO Layer for Negative Capacitance Applications
The current work reports fabrication of a ferroelectric HZO layer within the gate stack of Pt/ZrO2/HZO/HfO2/p-Si MOS device for achieving ‘negative...
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Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT
Biosensors are such devices that discover employment in our everyday life in various fields. In this manuscript, we have designed a ferroelectric GaN...
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Fabrication of Lead-Free Ferroelectric Bi0.5Na0.5TiO3-Based Materials for Transducer Applications
Lead-free ferroelectric materials were promised to replace lead-based Pb(Zr,Ti)O3 materials for environmental and human health concerns. Lead-free...
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Reservoir computing on a silicon platform with a ferroelectric field-effect transistor
Reservoir computing offers efficient processing of time-series data with exceptionally low training cost for real-time computing in edge devices...
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Strain Gradient Finite Element Formulation of Flexoelectricity in Ferroelectric Material Based on Phase-Field Method
Flexoelectricity is a two-way coupling effect between the strain gradient and electric field that exists in all dielectrics, regardless of point...
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Correlating the Interfacial Polar-Phase Structure to the Local Chemistry in Ferroelectric Polymer Nanocomposites by Combined Scanning Probe Microscopy
Ferroelectric polymer nanocomposites possess exceptional electric properties with respect to the two otherwise uniform phases, which is commonly...
