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Highly Selective Electrocatalytic CuEDTA Reduction by MoS2 Nanosheets for Efficient Pollutant Removal and Simultaneous Electric Power Output
Electrocatalytic reduction of ethylenediamine tetraacetic acid copper (CuEDTA), a typical refractory heavy metal complexation pollutant, is an...
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CaO-Assisted Carbothermal Reduction of MoS2 to Synthesize Molybdenum Powder
Molybdenite (MoS 2 ) is the most commonly used mineral for molybdenum extraction. In this work, molybdenum (Mo) powder was directly synthesized via...
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Design of Low-Power CMOS VCO with Three Transistors NAND Gate and MOS Varactor
A low-power VCO circuit design with varying NMOS load and 3-transistors NAND gate and is presented. VCO circuit is designed with 180 nm gate length....
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Power Efficient Analysis of MOS Current Mode Logic Based Delay Flip Flop
Prompt escalation of technology in the realm of electronics is beyond comparison. Pronounced digital circuits like registers, buffers, counters and...
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Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer
Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties....
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Thermo-electro-mechanical Effects of Copper TSV Interconnects on the MOS Characteristics in Stacked 3D Integration
Stacked 3 Dimensional IC (3DIC) is one of the profound potential structures for boosting the features and performances of the chip. The basic layout...
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Transimpedance type MOS-C bandpass analog filter core circuits
In this paper, we present six area-efficient transimpedance type second-order analog filters. There are many applications where the available signal...
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Synthesis and Application of MoS2 Nanosheets for the Removal of Amoxicillin from Water: Response Surface Method
Antibiotic pollutants in aqueous solutions have major environmental and human health consequences such as toxicity to algae, disturbance in hormones,...
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Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs
An analytical I–V model for a double-gate ballistic monolayer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) with 5 nm channel length is...
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Phase and Structure Optimizations of MoS2 Concentrate Pellets with Al2O3-SiO2 Additives During Oxidative and Volatilizing Roasting Process
The novel one-step oxidation–volatilization process for separating MoO 3 from pelletized MoS 2 concentrate supported on a porous Al 2 O 3 -SiO 2 skeleton...
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Influence of Different Squeeze Pressures on Metallurgical and Tribological Behavior of A356 Silicon Carbide and MoS2-Based Hybrid Composites
Squeeze casting, a fusion of gravity die casting and hot forging under pressure, enables the production of pore-free, fine-grained castings crucial...
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Economical Fabrication of Superparamagnetic CoFe2O4 Nanodots@MoS2 Nanosheets with Double PEGylation Using Non-ionic Surfactants with Enhanced Biological Activity
In this work, the fabrication of CoFe 2 O 4 nanodots–MoS 2 nanosheets with double PEGylation (COMPI) is achieved by cost-effective methods. The...
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Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate
The tribological properties and scratch resistance of MoS 2 bilayer deposited on SiO 2 /Si substrates prepared via chemical vapor deposition are...
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Synthesis of N-doped carbon quantum dots as lubricant additive to enhance the tribological behavior of MoS2 nanofluid
In this study, a novel lubricant additive nitrogen-doped carbon quantum dot (N-CQD) nanoparticle was prepared by the solvothermal method. The...
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Optimization of Wear Strength of Stir-Cast ZA-27 Hybrid Composites Reinforced with Zirconium Silicate and MoS2 Powder
Stir casting was used to prepare ZA-27 hybrid composites with weight fractions of 1.5 wt%, 3.0 wt%, 4.5 wt%, and 6.0 wt% of primary reinforcement...
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Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias-Induced Stress
The present work compares the reliability of AlGaN/GaN HEMT and MOS-HEMT using ATLAS TCAD software in terms of positive gate bias-induced stress. The...
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Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical...
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Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor
AbstractIt is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The...
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Topology Variations of an Amplifier-based MOS Analog Neural Network Implementation and Weights Optimization
Neural networks are achieving state-of-the-art performance in many applications, from speech recognition to computer vision. A neuron in a...
