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Continuous synthesis of boron-doped carbon nitride supported silver nanoparticles in an ultrasound-assisted coiled flow inverter microreactor
The combination of ultrasound and microreactors for the synthesis of nanomaterials is becoming increasingly popular, but effectively altering the...
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FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node
Stress engineering is one of the best techniques to enhance the potential of a device. In the first phase of this work, the impact of stress on the...
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Multivalued Logic Inverter Using Multiple Channel Field Effect Transistor (MCFET)
Multivalued logic can be implemented using multiple channel field effect transistor (MCFET) which produces multiple states in its transfer...
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Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET
In this paper tunnel field effect transistor is reintroduced as an efficient low power replacement of MOSFET. The main drawbacks of TFET devices,...
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Wideband Graphene-Based Fractal Absorber and its Applications as Switch and Inverter
In this paper, the idea of square fractal geometry has been utilized to introduce a tunable wideband graphene-based perfect plasmonic absorber in the...
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Effect of Mole fraction and Fin Material on Performance Parameter of 14 nm Heterojunction Si1-xGex FinFET and Application as an Inverter
This work presents a new SOI 14 nm heterojunction FinFET with Si 1-x Ge x fin for low-power digital logic circuits. The channel region of the proposed...
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CMOS Ring Oscillators Based on Do**-Modified Nanowire FETs: a Novel Design Strategy
We present a new Step Doped Drain and Source Nanowire FET (NWFET) using do** profile engineering to modify the energy band diagram. This transistor...
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A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node
In this paper, the idea of electrically doped (ED) Nano-scale TFETs is used to design a non-tunneling n-type NWFET with an additional gate named the...
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Design and Analysis of Heterojunction Inverted-T P-FinFET on 14nm Technology Node for Use in Low-Power Digital Circuits
FinFET (fin-shaped field-effect transistor) devices hold unique properties like reduced short-channel, high I on /I off (On Current/Off Current) current...
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Effect of Work Function Tuning over the Device Characteristics of GAA SNSTFT
This article talks about optimization of a p-channel Gate All Around Stacked Nano Sheet Thin Film Transistor (GAA SNSTFT) using Titatium Nitride...
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DFT-based Atomic Calculation of Si-doped HfO2 and Effect of its Negative Capacitance on Analog/RF, and VTC Parameters of MOSFET
Execution grids of develo** electronic devices are being examined to find substitutes for MOSFETs in the quest to minimize power dissipation and...
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Design and Analysis of Recessed Double Gate Junctionless Field-Effect-Transistor Based Digital Standard Cells
The recently proposed recessed double gate junctionless field-effect-transistor (R_DGJLFET) based circuit performance has been investigated with...
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Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET for Low Power Applications
Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET has been explored for low power applications. This...
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Performance Analysis of Tunnel FET Based Ring Oscillator Using Sentaurus TCAD
A detailed Sentaurus TCAD simulation based study for Silicon Double Gate Tunnel Field Effect Transistor (Si-DG TFET) based Ring Oscillator (RO) is...
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Influence of Gate Oxide and Subthreshold Leakage in Domino Using Si Nano-Materials
This paper describes a novel method for reducing gate oxide and subthreshold leakage in domino using Si Nano-materials. Between the silicon precharge...
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Self-Consistent LCAO Based DFT Analysis of High-k Spacers and its Assessment on Gate-Stacked NCFET for Improved Device-Circuit Performance
This work investigates a Gate-Stacked negative capacitance field-effect transistor with a high dielectric material layer in the substrate region...
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L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications
This work presents the design and simulation of a novel double-gate L-shaped Schottky barrier MOSFET (DG-LS-SB-MOSFET). The device uses a low work...
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A Novel Approach to Investigate Analog and Digital Circuit Applications of Silicon Junctionless-Double-Gate (JL-DG) MOSFETs
The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved...
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Investigation of Power on Silicon Adiabatic for VLSI Applications
In this article, a novel silicon adiabatic circuit is proposed for low power applications. To achieve efficient performance, the charging and the...
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Modeling of molecular ternary logic gates and circuits based on diode structures
Modeling in molecular electronics is of great importance, and the use of semiconductor components for this type of modeling accelerates the...
