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Simulation Based Investigation of Triple Heterojunction TFET (THJ-TFET) for Low Power Applications
We designed a new model tunnel field-effect transistor (TFET) based on Triple Heterojunction Tunnel Field Effect Transistor (THJ-TFET) is...
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Dielectric Modulated Negative Capacitance Heterojunction TFET as Biosensor: Proposal and Analysis
In this article, a label-free biosensor with a single cavity that uses a negative capacitance heterojunction charge-plasma-based tunnel FET...
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Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET
Vertically Stacked Nanosheet TFET (VNS-TFET) can break the subthreshold swing limit of MOSFETs and achieve higher layout efficiency. Due to the...
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Drain Charge Technique in TFET for Analog Transconductor Application
The analog performance of TFET suffers from gate-to-drain miller capacitance. Therefore, the optimal drain do** range (charge distribution) and...
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Evaluation of Design and Performance of Biosensor Utilizing Ferroelectric Vertical Tunnel Field-Effect Transistor (V-TFET)
In this work, a novel Ferroelectric gate oxide along with high-k dielectric HfO 2 is introduced in the Vertical TFET structure to incorporate the...
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Simulation of GAA-NW-TFET Biosensor with Cluster Charge Probes for Target Biomolecule Detection
This study introduces and simulates a Gate-All-Around Nanowire Tunnel Field Effect Transistor (GAA-NW-TFET) biosensor for biomolecule detection. The...
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A Simulation Study of the Effect of Trap Charges and Temperature on Performance of Dual Metal Strip Double Gate TFET
The TFET is a transistor with structure very similar to MOSFET but operates according on the Band-to-band tunneling (BTBT) principle plus, it’s...
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Impact of traps on DC, analog/RF, and linearity performance of Ferro-TFET
In this article, we investigated the influence of non-identical interface trap charges (ITCs) (positive or donor and negative or acceptor) on the...
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Qualitative Analysis of Dual Material Gate (SiO2/HfO2) Underlapped on Drain Side TFET (DMGUD-TFET) Using Work Function Engineering
In this paper, we propose Dual Material Gate underlapped on drain side with symmetrical three regions of Tunnel Field Effect Transistor (DMGUD-TFET)...
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A Theoretical Performance and Reliability Investigation of a Vertical Hetero Oxide Based JL-TFET under Ideal Conditions
The fabrication complexity, leakage current, low-power operation, and cost of nano-scale devices are major concerns. To address these challenges, we...
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A Paradigm Shift in Vertical Tunneling Double Gate TFET Performance: Unveiling the Implications of Spacer-Drain Overlap
A novel double gate tunnel field-effect transistor with spacer-drain overlap (SDO-DGTFET) has been suggested and thoroughly examined. Excellent...
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Demonstration and Performance Assessment of Dopant Free TFET Including Lattice Heating and Temperature Effects
The failure of MOSFET at ultra-small dimensions has directed researchers to investigate alternate FETs. Vast applications and the compactness of...
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Design and Comparative Analysis of Heterogeneous Gate Dielectric Nanosheet TFET with Temperature Variance
In this article, a Heterogeneous Gate-Dielectric Nanosheet Tunnel Field Effect Transistor (HD-NSH-TFET) with three channels is investigated using the...
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Design and Performance Evaluation of a Novel Dual Tunneling based TFET Considering Trap Charges for Reliability Improvement
Interface trap charges originate in the semiconductor while, fabricating the device, which occur due to the process, radiation stimulated...
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Design and Simulation of Symmetrical Dual Gate on Drain Side with Overlapped and Underlapped Regions of TFET
A unique Symmetrical Dual Metal Gate Extended on drain side with overlapped and underlapped three regions of Tunnel Field Effect Transistor...
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Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)
This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD)...
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Performance Analysis of Double Material Gate (DG) -TFET with Channel Do**
Double Material Gate (DG) Tunnel Field Effect Transistor (TFET) is proposed in this paper with current semiconductor materials analogous to Silicon...
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Design and Analysis of a Novel Asymmetric Source Dual-Material DG-TFET with Germanium Pocket
This article proposes a novel asymmetric source dual-material double-gate Tunnel Field-Effect Transistor with Ge-pocket (ASDM-DGTFET). The use of a...
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Analytical Modeling for a New Structure of Dielectric Pocket-Based Dual Material Double Gate TFET with Gate Oxide Stack
In this paper, a new structure of dielectric pocket-gate oxide stack dual material double gate tunnel FET (DP-GOS-DMDG TFET) is proposed and its...
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Partially Extended Germanium Source DG-TFET: Design, Analysis, and Optimization for Enhanced Digital and Analog/RF Parameters
Tunnel field-effect transistors have demonstrated a predominant performance in the field of semiconductors. However, low drive current and...