Search
Search Results
-
Impact of traps on DC, analog/RF, and linearity performance of Ferro-TFET
In this article, we investigated the influence of non-identical interface trap charges (ITCs) (positive or donor and negative or acceptor) on the...
-
Polynomial Equations based on Bouguer–Lambert and Beer Laws for Deviations from Linearity and Absorption Flattening
AbstractPolynomial through the origin equations based on the Bouguer—Lambert and Beer laws were proposed for the accurate representation of positive...
-
Comparison of RF/Analog and Linearity Performance of Various TFETs Using Source Engineering
This paper reports the comparison electrical of parameters in dual material double gate (DMDG) Tunnel Field Effect Transistor (TFET) through source...
-
Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2 GaN MOSHEMT
In this work, the authors have demonstrated and differentiated between various analog/RF and linearity performances of a lattice-matched normally off...
-
Thermal Effect of Analog/RF Performance, Linearity and Harmonic Distortion for L-Gate TFET
In this paper an investigation has been done on temperature dependence (200 K to 450 K) of analog/RF parameters, linearity, and harmonic distortion...
-
Temperature Effect on Analog/RF and Linearity Parameters of Stacked Oxide TMG FinFET
This manuscript aims to design an optimized TMG FinFET by applying dielectric material engineering. In this technique, H f O 2 is stacked over S i O 2 at...
-
Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)
The negative capacitance effect on MOS transistors has lately gained lot of momentum due to the use of ferroelectric material in the gate. They have...
-
Assessing the Impact of Drain Underlap Perspective Approach to Investigate DC/RF to Linearity Behavior of L-Shaped TFET
Controllability over the gate is facilitated in vertical TFET formations because of the favorable electrostatic potential and tunneling under the...
-
Surface Orientated < 100 > , < 110 > , and < 111 > Silicon-based Double-Gate Tunnel-FET for Linearity and Analog/RF Performance Analysis
The present work investigates the impact of < 100 > , < 110 > , and < 111 > surface orientations as a novel on silicon double-gate tunnel...
-
Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis
In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with a better Ion. HfO2 is...
-
Linearity Performance and Harmonic Distortion Analysis of IGE Junctionless Silicon Nanotube-FET for Wireless Applications
This manuscript investigates the effect of inner gate engineering (IGE) on the linearity and harmonic distortion performance of junctionless (JL)...
-
RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate
In this article, the authors have demonstrated and analyzed various analog/RF, and linearity performances of an AlGaN/GaN gate recessed MOSHEMT...
-
Ultra Steep Ge-Source Do**less Tunnelling Field Effect Transistor with Enhanced Drive Current: DC to Linearity Characteristics Analysis
Ge-source do**less tunnelling field effect transistor (Ge-source DLTFET) with the optimization of dielectric oxide thickness under the source and...
-
RF and Linearity Parameter Analysis of Junction-less Gate All Around (JLGAA) MOSFETs and their dependence on Gate Work Function
In this work, a detailed investigation of RF and linearity analysis of junction-less Gate All Around (JLGAA) MOSFETs through SILVACO TCAD device...
-
Effects of Linearity and Reliability Analysis for HGO-DW-SCTFET with Temperature Variation for High Frequency Application
This paper examines the effects of temperature variation on Hetero Gate Oxide Dual Work Function Step Channel Tunnel Field-Effect Transistor...
-
Performance Evaluation & Linearity Distortion Analysis for Plasma- Assisted Dual-Material Carbon Nanotube Field Effect Transistor with a SiO2-HfO2 Stacked Gate-Oxide Structure (DM-SGCNFET)
This work demonstrates the simulation analysis of a novel device Plasma-Assisted Dual-Material Stacked Gate-Oxide Carbon Nanotube Field Effect...
-
Analysis of Temperature Dependent Effects on DC, Analog/RF and Linearity Parameters for a Delta Doped Heterojunction Vertical tunnel FET
In this article, using a 3D Technology computer aided design (TCAD) simulator, a systematic investigation on the effects of temperature variations in...
-
Linearity and Analog Performance Analysis of Silicon Junctionless Bulk FinFET Considering Gate Electrode Workfunction Variability and Different Fin Aspect Ratio
In case of conventional MOSFET structures, Short-Channel Effects (SCEs) are key issues for device performance as dimensions of these devices are...
-
Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET
TFET is very favourable device than MOSFET in terms of low power design and applications. The accurate fabrication of device results in satisfactory...
-
Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs
Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design....