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Article
The formation and stability of Si1-xC x alloys in Si implanted with carbon ions
Si1-xCx alloys of carbon (C) concentration between 0.6%–1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si1-xC x alloys under differen...
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Article
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substra...
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Article
Rare earth do** effect on the optical properties of several fluorescence materials
Based on the optical properties of rare earth fluorescence materials, a set of fluorescence optical fiber systems was designed. The system selects the emitting LED, which is economical and practical as a light...
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Article
Non-affine atomic rearrangement of glasses through stress-induced structural anisotropy
The atomic-scale structural rearrangement of glasses on applied stress is central to the understanding of their macroscopic mechanical properties and behaviour. However, experimentally resolving the atomic-sca...