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    Article

    Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate

    Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs)...

    Jaehyun Moon, Dong-** Park, Choong-Heui Chung… in MRS Online Proceedings Library (2011)

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    Article

    Characteristics of Dopant Activation by Sequential Lateral Solidification (SLS)

    The characteristics of dopant activation by sequential lateral solidification in poly-Si films is investigated using sheet resistance measurement and Raman measurement. Sheet resistance of n+ and p+ doped poly...

    Yong-Hae Kim, Choong-Yong Sohn, Choong-Heui Chung… in MRS Online Proceedings Library (2004)