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Article
Lower rounds lattice-based anonymous AKA under the seCK model for the IoT
The authenticated key agreement (AKA) method used in the Internet of Things (IoT) provides identity authentication and agreed symmetric keys to encrypt large amounts of communication messages for devices and s...
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Article
Improved 4H-SiC MESFET with Partially Undoped Region and Tortuous Channel
In this paper, an improved 4H-SiC metal semiconductor field effect transistor with a partially undoped region and tortuous channel (URTC MESFET) is proposed. Based on the drain side-recessed p-buffer structure...
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Article
A co-optimization method of thermal-stress coupling 3D integrated system with through silicon via
In this paper, a co-optimization design method for thermal-stress coupling 3-dimensional integrated system with through silicon via is proposed based on the finite element method, support vector machine model ...
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Article
Open AccessActive acoustic field modulation of ultrasonic transducers with flexible composites
The simple acoustic field generated by conventional transducers limits the development of ultrasound applications. Current methods rely on passive acoustic lenses or active arrays to manipulate ultrasonic wave...
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Article
Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave
High-power microwave damage to enhanced-mode GaN high electron mobility transistors (HEMT) is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of GaN, whi...
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Article
Blockchain-based cloud-edge clock calibration in IoT
The explosive growth of the IoT continues to change the way people live, followed by a plethora of IoT-based scenarios resources and applications, such as smart homes, smart grids, and smart transportation. In...
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Article
Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect
In this paper, a novel Super Junction (SJ) Lateral Double-diffused MOSFET (LDMOS) is proposed. The two sides of the device substrate are connected with source-drain electrodes through ohmic contacts, so that t...
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Chapter and Conference Paper
Research and Application Progress of Conductive Ink Based on Polyaniline
As a key material for printed electronics, conductive inks have received extensive attention. Conductive polymer polyaniline (PANI) as a conductive filler has the advantages of easy synthesis, low cost, high c...
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Article
Impedance modeling and analysis of multi-stacked on-chip power distribution network in 3D ICs
An accurate impedance modeling of a multi-stacked on-chip power distributed network (PDN) based on through-silicon-vias (TSVs) is vitally important to estimate the electrical performance in three-dimensional i...
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Article
Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications
An improved 4H-SiC metal–semiconductor field-effect transistor (MESFET) with a double-symmetric-step buried oxide layer is proposed, and the mechanism is studied through TCAD simulation. The double-step buried...
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Article
Matching layer design of a 2–2 piezo-composite ultrasonic transducer for biomedical imaging
The performance of the piezo-composite transducer is greatly influenced by the matching layers. Based on finite element analysis and artificial intelligence, an optimization design method is proposed to optimi...
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Article
Blockchain-based trust management for verifiable time synchronization service in IoT
With the rapid development of IoT, to manage the explosive growth of devices, time synchronization in IoT systems has become crucial. A traditional solution is to designate a trusted time relay to provide time...
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Article
Analytical approach for polar magnetooptics in multilayer spin-polarized light emitting diodes based on InAs quantum dots
To explain the magneto-optical (MO) data in GaAs/InAs/GaAs/MgO/Co/Au thin-film structures, we modeled the optical interactions within magnetic layered structures. Firstly, for a numerical simulation of the MO ...
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Article
A blockchain-based privacy preservation scheme in multimedia network
With networking, big data and rapid development and wide application of 5G networks, traditional network architecture cannot handle massive amounts of media data generated by a large number of mobile or PC dev...
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Article
LET-dependent model of single-event effects in MOSFETs
In this paper, we simulate the electrical characteristics of the n-type metal-oxide-semiconductor (NMOS) transistor in a 65-nm complementary metal-oxide-semiconductor (CMOS) inverter under the actions of heavy...
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Article
A dynamic and verifiable multi-keyword ranked search scheme in the P2P networking environment
With the rapid development of the Internet, Peer to Peer(P2P) network has been applied in various fields. Users in P2P network also have a large amount of data, but users cannot provide enough storage space lo...
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Article
MTL-based modeling and analysis of the effects of TSV noise coupling on the power delivery network in 3D ICs
With the application of heterogeneous integration and advanced packaging technologies, the use of through-silicon vias (TSVs) to deliver the power supply has become popular in the design of stacked chips in th...
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Article
Dy-doped BiFeO3-PbFeO3-based piezoelectric ceramics for nondestructive testing ultrasonic transducer applications
0.63[0.9BiFeO3–0.1DyFeO3]–0.37PbTiO3 (BDF-PT) multiferroic ceramics with large piezoelectric response (d33 = 88 pC/N) and high Curie temperature (TC = 420 °C) were fabricated around the morphotropic phase boundar...
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Article
Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser
By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser was designed, where three Ge0.9Sn0.1 layers act as wells separated by three Si0.14Ge0.71Sn
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Article
A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS
A low noise figure (NF) and high power gain (S21) 3–10 GHz ultra-wideband (UWB) low noise amplifier (LNA) in 65 nm CMOS technology is proposed for UWB system which has a high figure of merit. A shunt–shunt res...
