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Article
Effect of Ni do** on the microstructure and magnetic properties of Fe–Ga ribbons
A set of Ni do** Fe–Ga ribbons were fabricated using melt spinning method. The microstructure was studied using extended X-ray absorption fine structure spectroscopy (EXAFS), high resolution X-ray diffractio...
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Article
Microstructure and Mechanical Properties of Dissimilar Joints of Al-Mg2Si and 5052 Aluminum Alloy by Friction Stir Welding
Al-Mg2Si alloy and 5052 Al alloy were welded successfully by friction stir welding (FSW) in this study. The results show that the alloy consists of three distinct zones after FSW: the base material zone (BMZ), th...
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Article
Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics
La0.5Bi0.5MnO3 ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were ide...
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Article
Formation of a lamellar 14H-type long period stacking ordered structure in an as-cast Mg–Gd–Zn–Zr alloy
A novel as-cast Mg96.82Gd2Zn1Zr0.18 alloy was produced by conventional ingot metallurgy. By scanning electron microscope and transmission electron microscope observations, its as-cast microstructure is mainly com...
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Article
Preparation of high-quality ß-SiC nanowhiskers by using carbon fibres as carbon source
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Article
Structure and spectroscopic characterization of polycrystalline vanadyl phthalocyanine (VOPc) films fabricated by vacuum deposition
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Article
Dielectric characteristics of Ba(Mg1/3Ta2/3)O3 ceramics sintered at low temperatures
Dielectric characteristics of Ba(Mg1/3Ta2/3)O3 ceramics (BMT ceramics) sintered at low temperatures with 2–3 wt% NaF additives were determined. A dielectric constant of 25 and extremely low dielectric loss (< 0.0...
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Article
Effects of NaF upon sintering temperature of Ba(Mg1/3Ta2/3)O3 dielectric ceramics
The effects of NaF additive upon the sintering temperature of Ba(Mg1/3Ta2/3)O3 dielectric ceramics were investigated, and the densification of the present ceramics could be performed well at lower temperatures, e...
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Chapter
2-Dimensional Mosfet Analysis Including Impact Ionization by Self-Consistent Solution of the Boltzmann Transport and Poisson Equations Using a Generalized Spherical Harmonic Expansion Method
We present a new 2-D MOSFET simulation tool which employs a spherical harmonic expansion to deterministically solve the Boltzmann transport equation (BTE), and thereby provide the distribution function for the...
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Article
Study of Oxidation Properties of Amorphous Si:B Films
Thin films of an amorphous silicon-boron alloy with boron content 1–50 at.% have been deposited by low pressure chemical vapor deposition (LPCVD). The boron content and film thickness of the samples were contr...
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Article
Raman Scattering in Electrochemically Prepared Porous Silicon
Porous silicon of various porosity has been prepared by electrochemical etching of silicon with different do** levels. Room temperature photoluminescence in the visible range is observed from the powder scra...
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Article
Growth of Microcrystalline Silicon in Ultrathin Layers
We report recent studies of the crystallization of ultrathin (< 10 nm ) amorphous silicon layers clad by silicon dioxide. We observe changes in Raman scattering spectra which indicate that nanocrystalline sili...
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Article
Structural Stability of Amorphous Semiconductor Superlattices
We report recent results of studies of the structure and thermal stability of periodic multilayers based on hydrogenated amorphous silicon, hydrogenated amorphous germanium, silicon nitride and silicon oxide. ...
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Article
Raman Studies of Microstructural Changes in Amorphous Silicon-Boron Alloys Due to Annealing
Crystallization of amorphous Sil−x.Bx alloy films by annealing is studied. Amorphous Sil−xBx. alloy films with composition of boron x ranging from 0.01 to 0.5 are deposited on Si substrates at a temperature of 48...