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  1. Article

    Publisher Correction: Electronic structure of the parent compound of superconducting infinite-layer nickelates

    An amendment to this paper has been published and can be accessed via a link at the top of the paper.

    M. Hepting, D. Li, C. J. Jia, H. Lu, E. Paris, Y. Tseng, X. Feng… in Nature Materials (2020)

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    Article

    Electronic structure of the parent compound of superconducting infinite-layer nickelates

    The search continues for nickel oxide-based materials with electronic properties similar to cuprate high-temperature superconductors1–10. The recent discovery of superconductivity in the doped infinite-layer nick...

    M. Hepting, D. Li, C. J. Jia, H. Lu, E. Paris, Y. Tseng, X. Feng… in Nature Materials (2020)

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    Article

    Spatially resolved ultrafast magnetic dynamics initiated at a complex oxide heterointerface

    Large-amplitude, infrared-active vibrations excited in a LaAlO3 substrate induce magnetic order melting in a NdNiO3 film. The melt front initiated at the interface propagates in the film at supersonic speeds, lik...

    M. Först, A. D. Caviglia, R. Scherwitzl, R. Mankowsky, P. Zubko… in Nature Materials (2015)

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    Article

    Speed limit of the insulator–metal transition in magnetite

    The insulator-to-metal transition occurring in magnetite is known as the Verwey transition, and its precise mechanism has recently come under renewed attention. Using pump–probe X-ray diffraction and optical r...

    S. de Jong, R. Kukreja, C. Trabant, N. Pontius, C. F. Chang, T. Kachel… in Nature Materials (2013)

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    Article

    Electrical and Optical characteristics of ZnO:Al Thin Films

    ZnO with hexagonal wurzite structure is a wide band gap n-type semiconductor. ZnO films can be prepared to obtain high transparency in the visible range, low resistivity, chemical stability and stability in hy...

    M. J. Keum, J. S. Yang, I. H. Son, S. K. Shin, H. W. Choi… in MRS Online Proceedings Library (2011)

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    Article

    Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film

    To improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excelle...

    J. H. Kim, Y. S. Kim, B. H. Jang, H. Namkoong, W. S. Lee… in MRS Online Proceedings Library (2009)

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    Article

    Electrospun Poly(vinylidene fluoride)-based Carbon Nanofibers for Hydrogen Storage

    Poly(vinylidene fluoride) (PVdF) fine fiber of 200–300 nm in diameter was prepared through the electrospinning process. Dehydrofluorination of PVdF-based fibers for making infusible fiber was carried out using...

    H. J. Chung, D. W. Lee, S. M. Jo, D. Y. Kim, W. S. Lee in MRS Online Proceedings Library (2004)

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    Article

    Cabon Nanofibrous Materials Prepared from Electrospun Polyacrylonitrile Nanofibers for Hydrogen Storage

    Electrospun PAN nanofibers were carbonized with or without iron(III) acetylacetonate to induce catalytic graphitization within the range of 900–1500oC, resulting in ultrafine carbon fibers with the diameter of ab...

    S. H. Park, B. C. Kim, S. M. Jo, D. Y. Kim, W. S. Lee in MRS Online Proceedings Library (2004)

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    Article

    Micromechanical Analysis of Residual Stress Effect in CVD-Processed Diamond Wafer

    Diamond wafer, considered as promising material for electronic substrate, thermal spreader, etc., has been made using deposition technology such as microwave plasma assisted CVD (MPACVD). However, high residua...

    J. H. Jeong, D. Kwon, J. K. Lee, W. S. Lee, Y. J. Bai in MRS Online Proceedings Library (1999)

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    Article

    The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials

    It is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes...

    Y. J. Seo, W. S. Choi, S. Y. Kim, C. I. Kim, E. G. Chang… in MRS Online Proceedings Library (1998)

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    Article

    Alloying Behavior and Reliabilty of Pt Embedded Metal/n+-GaAs Thin Ohmic Contact System

    Pt embedded ohmic contacts to n+-GaAs (AuGe-800 Å/ Ni-150 Å/Pt-200 Å/Au-500 Å and AuGe-800 Å/Pt-200 Å/Ni-150 Å/Au-500 Å/n+-GaAs) have been developed for the advanced discrete devices and MMIC (monolithic microwav...

    C. Y. Kim, W. S. Lee, H. J. Kwon, Y. W. Jeong, J. S. Lee… in MRS Online Proceedings Library (1996)

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    Article

    Hydrogen desorption properties and electrode performances of Ti–Zr–Ni–V–Mn alloy

    The measurements of the desorption pressure-composition-temperature (P-C-T) of the TixZr1−xNiyV2−y (0 ≤ x ≤ 1,0 ≤ y ≤ 2) alloy have been investigated by means of a 32 factorial design method. The response surface...

    H. W. Yang, W. S. Lee, Y. Y. Wang, C. C. Wan, T. W. Cheng… in Journal of Materials Research (1995)