-
Article
Electrical and Optical characteristics of ZnO:Al Thin Films
ZnO with hexagonal wurzite structure is a wide band gap n-type semiconductor. ZnO films can be prepared to obtain high transparency in the visible range, low resistivity, chemical stability and stability in hy...
-
Article
Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film
To improve the IPD reliability of NAND flash memory, plasma oxidation was introduced as the post-treatment process of ONO (Oxide/Nitride/Oxide) IPD. The LP-CVD SiO2 modified by plasma oxidation showed the excelle...
-
Article
Electrospun Poly(vinylidene fluoride)-based Carbon Nanofibers for Hydrogen Storage
Poly(vinylidene fluoride) (PVdF) fine fiber of 200–300 nm in diameter was prepared through the electrospinning process. Dehydrofluorination of PVdF-based fibers for making infusible fiber was carried out using...
-
Article
Cabon Nanofibrous Materials Prepared from Electrospun Polyacrylonitrile Nanofibers for Hydrogen Storage
Electrospun PAN nanofibers were carbonized with or without iron(III) acetylacetonate to induce catalytic graphitization within the range of 900–1500oC, resulting in ultrafine carbon fibers with the diameter of ab...
-
Article
Micromechanical Analysis of Residual Stress Effect in CVD-Processed Diamond Wafer
Diamond wafer, considered as promising material for electronic substrate, thermal spreader, etc., has been made using deposition technology such as microwave plasma assisted CVD (MPACVD). However, high residua...
-
Article
The Hot Carrier Degradation and Device Characteristics with Variation of Pre-Metal Dielectric Materials
It is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes...
-
Article
Alloying Behavior and Reliabilty of Pt Embedded Metal/n+-GaAs Thin Ohmic Contact System
Pt embedded ohmic contacts to n+-GaAs (AuGe-800 Å/ Ni-150 Å/Pt-200 Å/Au-500 Å and AuGe-800 Å/Pt-200 Å/Ni-150 Å/Au-500 Å/n+-GaAs) have been developed for the advanced discrete devices and MMIC (monolithic microwav...
-
Article
Hydrogen desorption properties and electrode performances of Ti–Zr–Ni–V–Mn alloy
The measurements of the desorption pressure-composition-temperature (P-C-T) of the TixZr1−xNiyV2−y (0 ≤ x ≤ 1,0 ≤ y ≤ 2) alloy have been investigated by means of a 32 factorial design method. The response surface...