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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

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    GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

    In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...

    V. A. Sukhoveyev, V. A. Ivantsov… in MRS Internet Journal of Nitride Semiconduc… (2000)

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