Skip to main content

7 Result(s)

within V. A. Skuratov Remove this filter Nuclear Physics, Heavy Ions, Hadrons Remove this filter

and

  1. No Access

    Article

    Synthesis of TiZrNbHfTaC5 High-Entropy Carbide Powder: Sintering and Radiation Resistance Research

    This paper reports the results of the studies addressing the production of a high-entropy carbide of a TiZrNbHfTaC5 composition, followed by its consolidation and Bi ion irradiation at room temperature. The mecha...

    A. Ya. Pak, V. V. Uglov, V. A. Skuratov, A. A. Svinukhova… in Russian Physics Journal (2024)

  2. No Access

    Article

    Studying a Silica Film Implanted with Zn and Irradiated with Swift Xe Ions

    The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation ...

    V. V. Privezentsev, A. N. Palagushkin… in Bulletin of the Russian Academy of Science… (2019)

  3. No Access

    Article

    Effect of radiation on an acoustooptical tellurium dioxide crystal

    The results from in situ and post-exposure studies of the effect an electron beam has on the optical characteristics of a tellurium dioxide single crystal are presented. The acoustooptical material is irradiat...

    I. G. Pritulenko, V. B. Voloshinov… in Bulletin of the Russian Academy of Science… (2017)

  4. No Access

    Article

    Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

    The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that pos...

    F. F. Komarov, O. V. Milchanin… in Bulletin of the Russian Academy of Science… (2016)

  5. No Access

    Article

    A new nanoporous material based on amorphous silicon dioxide

    Processes for making nanoporous SiO2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. ...

    L. A. Vlasukova, F. F. Komarov… in Bulletin of the Russian Academy of Science… (2012)

  6. No Access

    Article

    Ion tracks in amorphous silicon nitride

    The morphology of the tracks of swift ions revealed in amorphous silicon nitride after treatment in an HF solution is studied. The Si3N4/Si structures were irradiated with Fe, Kr, and W ions in the electron energ...

    L. A. Vlasukova, F. F. Komarov… in Bulletin of the Russian Academy of Science… (2010)

  7. No Access

    Article

    Parallel fabrication of atomic nanostructures

    A new approach to fabrication of atomic nanostructures for atomic nanooptics is reported, which is based on the use of one-, two-, and three-dimensional spatial localization of laser fields at the nanoscale le...

    V. I. Balykin, P. A. Borisov, V. S. Letokhov… in Bulletin of the Russian Academy of Science… (2008)