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Article
Photoelectrochemical Etching of GaN Thin Films With Varying Carrier Concentrations
The evolution of the surface morphology of unintentionally doped and Si-doped GaN samples subjected to photoelectrochemical (PEC) etching in the carrier-limited regime in aqueous KOH is reported. It was found ...
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Article
Growth of High-Quality Pb(ZrxTi1-x)O3 Films by Peroxide MBE and Their Optical and Structural Characteristics
The growth of Pb(ZrxTi1-x)O3 (PZT) films by molecular beam epitaxy was demonstrated. Single-crystal, single-phase PZT films were grown on (001) SrTiO3 substrates at a growth temperature of 600°C. In situ monitori...
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Article
Structural and Optical Properties of PbTiO3 Grown on SrTiO3 Substrates by Peroxide MBE
Lead titanate (PbTiO3), a ferroelectric material with perovskite structure, has received a great deal of attention owing to a unique combination of its piezoelectric, pyroelectric, dielectric, electo- and acousto...
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Article
Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-Assisted Vapor Transport on Various Substrates
ZnO nanorods were grown by catalyst-assisted vapor phase transport on Si(001), GaN(0001)/c-Al2O3, and bulk ZnO(0001) substrates. Morphology studies showed that ZnO nanorods grew mostly perpendicularly to the GaN ...
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Article
Persistent Photoconductivity in High-mobility AlxGa1−xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy
We report on the persistent photoconductivity (PPC) effect in AlxGa1−xN/AlN/GaN heterostructures with two different Al compositions (x=0.15 and 0.25). The two-dimensional electron gas (2DEG) was characterized by ...