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  1. Article

    Open Access

    Photo-induced Do** in GaN Epilayers with Graphene Quantum Dots

    We demonstrate a new do** scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement o...

    T. N. Lin, M. R. Inciong, S. R. M. S. Santiago, T. W. Yeh, W. Y. Yang… in Scientific Reports (2016)

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  2. Article

    Open Access

    A Facile and Low-Cost Method to Enhance the Internal Quantum Yield and External Light-Extraction Efficiency for Flexible Light-Emitting Carbon-Dot Films

    Solution-processed, non-toxic carbon dots (CDs) have attracted much attention due to their unique photoluminescence (PL) properties. They are promising emissive layers for flexible light-emitting devices. To t...

    Z. C. Jiang, T. N. Lin, H. T. Lin, M. J. Talite, T. T. Tzeng… in Scientific Reports (2016)

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