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  1. No Access

    Article

    Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

    In this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and R...

    J. Pan, S. Afroz, N. Crain, W. Henning, J. Oliver, T. Knight in MRS Advances (2019)

  2. No Access

    Article

    Effects of Very High Workfunction Metals or Metal Alloys (NiCr) on High Switching Speed, HV Schottky Diodes for Mixed Signal or RF ASIC

    For high switching speed HV Schottky diodes, with very high work function metal and extremely lightly doped epi, the built-in potential may be too high for thermionic emission to occur, when the applied extern...

    J. Pan, A. Gaibrois, M. Marripelly, J. Leung, S. Suko, M. Lee, T. Knight in MRS Advances (2020)