7 Result(s)
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Article
Open AccessBlue-shifted and strongly-enhanced light emission in transition-metal dichalcogenide twisted heterobilayers
Moiré heterostructures produced by twisted heterojunction of transition-metal dichalcogenides are recognized as novel platforms for unique and tunable means of controlling the optical phenomena including photo...
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Article
Open AccessPossible permanent Dirac- to Weyl-semimetal phase transition by ion implantation
Three-dimensional (3D) topological semimetals (TSMs) are a new class of Dirac materials that can be viewed as 3D graphene and are referred to as Dirac semimetals (DSMs) or Weyl semimetals (WSMs) depending on w...
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Article
Open AccessGrowth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) are highly attractive as an emerging class of 2D materials, but only a few methods are available for fabricating them. These methods rely on ...
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Article
Optical Study of SiO2/nanocrystalline-Si Multilayers Using Ellipsometry
Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various d...
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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers
Si/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high...
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Article
Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemica...
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Article
Reversible and Irreversible Light-Induced Change of Photoluminescence in Porous Silicon
We have investigated the light-induced change of photoluminescence(PL) and its recovery in porous silicon. The exposure of the porous silicon to continuous laser light in vacuum results in the quenching of the...
