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Investigation on DC/RF Performance of LG = 19 nm Heterogeneous Integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5G and Quantum Computing Applications
The RF/DC performances of LG = 19 nm heterogeneous integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As composite channel based InP HEMT (high electron mobility transistor) on Si (Silicon) wafer was investigated by usin...
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Article
A Comprehensive Review on Thin Film Amorphous Silicon Solar Cells
In the last few years the need and demand for utilizing clean energy resources has increased dramatically. Energy received from sun in the form of light is a sustainable, reliable and renewable energy resource...